Abstract: Iridium oxide (IrO₂) thin films were successfully grown on SiO₂/Si(100) substrate by a DC magnetron reactive sputtering method with an Ir target(99.9% purity).
PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films
were highly directed at (110) or (200). The effect of sputtering parameters such as gun power, oxygen partial pressure (Ar/O₂) and growth temperature
and annealing conditions on the crystalline nature and morphology of IrO₂ thin films was discussed.

Key words: IrO₂ thin film, DC magnetron reactive sputtering, thermal annealing