Study on the Defect Energy Levels of High Resisitivity In-doped CdZnTe Crystals

doi:10.3724/SP.J.1077.2008.01049

Abstract

Abstract: Samples with different In dopant concentrations were grown by Low Pressure Vertical Bridgman Method. Low temperature photoluminescence (PL) spectra, Deep Level Transient Spectroscope (DLTS) and high resistivity Hall test were used to study major defects in high resistivity In-doped CdZnTe crystal and its possible compensating mechanism. The PL spectra showed that in the In-doped CdZnTe samples of high resistivity, In dopants occupied Cd vacancies, which would exist in undoped CdZnTe crystal, forming shallow donor defect [In_Cd⁺], located at E_c-18meV, and the [In_Cd⁺] interacted with [V_Cd^2-] to form a complex defect [(In_Cd⁺-V_Cd^2-)^-] at E_v+163meV. The DLTS results showed that a deep level donor defect was found at 0.74eV below the conduction band, representing probably the energy level of antisite defect [Te_Cd]. The results indicated that the electrical properties of In-doped CdZnTe crystals were dominated by a comprehensive compensating consequence among In donor defects, deep level donor defect Te antisites, intrinsic acceptor defect Cd vacancies and other impurities acceptor defects.

Key words: CdZnTe, low temperature PL, deep level transient spectroscopy, defect levels

CLC Number:

TN304

LI Gang,SANG Wen-Bin,MIN Jia-Hua,QIAN Yong-Biao,SHI Zhu-Bin,DAI Ling-En,ZHAO Yue. Study on the Defect Energy Levels of High Resisitivity In-doped CdZnTe Crystals[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.01049.

References

[1] Tümay O Tümer, Shi Yin, Victoria Cajipe, et al. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003, 497 (1): 21-29.
[2] Limousin O. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003, 504 (1-3): 24-37.
[3] Sang Wenbin, Qian Yongbiao, Shi Weiming, et al. Journal of Crystal Growth, 2000, 214-215: 30-34.
[4] Fochuk P, Panchuk O, Feychuk P, et al. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2001, 458 (1-2): 104-112.
[5] Chu Muren, Terterian Sevag, Ting David, et al. Applied Physics Letters, 2001, 79 (17): 2728-2730.
[6] Li Qiang, Jie Wanqi, Fu Li, et al. Journal of Applied Physics, 2006, 100 (1): 013518-1-4.
[7] Taguchi T, Ray B. Progress in Crystal Growth and Characterization, 1983, 6 (2): 103-162.
[8] Verity D, Shaw D, Bryant F J, et al. Journal of Physics C: Solid State Physics, 1982, 15 (19): L573-L583.
[9] Liu Hongtao, Sang Wenbin, Yuan Zheng, et al. Rare Metal Materials and Engineering, 2007, 36 (6): 1016-1019.
[10] Yang Ge, Jie Wangqi, Li Qiang, et al. Journal of Crystal Growth, 2005, 283 (3-4): 431-437.
[11] Fiederle M, Fauler A, Konrath J. et al. IEEE Transactions on Nuclear Science, 2004, 51 (41): 1864-1868.
[12] Seto S, Suzuki K, Abastillas V N Jr, et al. Journal of Crystal Growth, 2000, 214-215: 5-8.
[13] Lang D V. Journal of Applied Physics, 1974, 45 (7): 3023-3032.
[14] Berding M A. Applied Physics Letters, 1999, 74 (4): 552-554.
[15] Meyer B K, Stadler W. Journal of Crystal Growth, 1996, 161 (1-4): 119-127.
[16] Lee E Y, McChesney J L, James R B, et al. Compensation and trapping in semi-insulating CdZnTe, Proceedings of the 1999 Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, Denver, CO, USA, 1999, 115-128.
[17] Franc J, Hlidek P, Moravec P, et al. Semiconductor Science And Technology, 2000, 15 (6): 561-564.
[18] Rüb M, Achtziger N, Meier J, et al. Journal of Crystal Growth, 1994, 138 (1-4): 285-289.
[19] Molva E, Pautrat J L, Saminadayar K, et al. Physical Review B, 1984, 30, 003344.
[20] Molva E, Saminadayar K, Pautrat J L, et al. Solid State Communications, 1983, 48 (11): 955-960.
[21] Franc J, Babentsov V, Fiederle M, et al. IEEE Transactions on Nuclear Science, 2004, 51 (3): 1176-1181.