Abstract: The low temperature sintering and low dielectric properties ceramic materials of “borosilicate glass+
alpha-quartz+zinc silicate” system were prepared by applying the principle of the componund structure. The crystal phases, dielectric properties and
microstructure of the all sintering samples were analyzed by X-ray diffraction (XRD), HP4194ALCR analyzer and scanning electron microscopy
(SEM) respectively. The results show these materials possess very low dielectric constant (K=4～5, 1MHz)and very low dissipation factor
(tanδ<0. 001, 1MHz)in high frequencies. And they can be sintered below 900℃. These materials are promising dielectric materials
for high frequencies(≥1GHz) mulitlayer chip inductors (MLCIs). In the mean while, new crystalline phase of cristobalite is formed during
re-sintering the borosilicate glass and ZnSiO_3 phase is formed from zinc silicate visa zinc ions melting into the glass net. Zinc silicate
phase is of an aid-sintering function. The changes of dielectric properties of the samples with frequencies are fit with Debye equation.

Key words: borosilicate glass+alpha quartz+zinc silicate ", dielectric materials, high frequency MLCIs