压力和转速对垂直热壁CVD外延SiC生长速率和均匀性的影响
李晓磊, 齐小方, 马文成, 徐永宽
Effects of Pressure and Rotation Speed on the Growth Rate and Uniformity of SiC in a Vertical Hot-wall CVD Epitaxial System
LI Xiaolei, QI Xiaofang, MA Wencheng, XU Yongkuan
无机材料学报
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DOI: 10.15541/jim20260067
