AlN陶瓷是一种性能优良的电子封装材料,但不容易与金属直接连接在一起.实验采用98(Ag28Cu)2Ti活性焊料, 在真空条件下实现了AlN陶瓷与MoNiCu合金的活性封接.利用EBSD、EDS、XRD方法研究了焊接区域以及剪切试样断裂表面的微观结构和相组成,测定了焊区的力学性能和气密性.研究结果显示:在AlN陶瓷界面上有TiN生成,说明陶瓷与焊料之间是一种化学键合,而在MoNiCu合金的界面上有少量的NiTi金属间化合物存在.剪切后试样的断裂面上有TiN和AlN,说明断裂发生在靠近陶瓷的焊层区域.焊接试样性能优良:气密性达到1.0×10-11Pa·m3/s,平均抗弯强度σb=78.55MPa,剪切强度στ=189.58MPa.
AlN ceramic is a highperformance electronic packaging material, but it is difficult to joint with metals directly. AlN ceramic and Mo-Ni-Cu alloy was brazed using 98(Ag28Cu)2Ti active filler alloy in vacuum. EBSD, EDS and XRD were used to study the microstructure and phases of bonding area and the surface of the sheared sample. The mechanical properties and hermeticity performance were measured. It is found that TiN exists in the interface of AlN ceramic, which indicate that there is a chemical bond between ceramic and filler metal, but there is a few of Ni-Ti intermetallics in the interface of MoNi-Cu alloy. TiN and AlN are found on the sheared fracture surface, which indicate that fracture occurrs from the bonding area near the AlN ceramic. The sample has good performance with gas leakage rate of 1.0×10-11Pa·m3/s, average bending strength of σb=78.55MPa and shear strength of στ=189.58MPa.
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