采用催化热解方法分别 制备出碳纳米管和镓掺杂碳纳米管, 并利用丝网印刷工艺将其制备成纳米管薄膜. 对此薄膜进行低场致电子发射测试表明, 碳纳米管和镓掺杂纳米管开启电场分别为2.22和1.0V/μm, 当外加电场为2.4V/μm, 碳纳米管发射电流密度为400μA/cm2, 镓掺杂纳米管发射电流密度为4000μA/cm2. 可见镓掺杂碳纳米管的场发射性能优于同样条件下未掺杂时的碳纳米管. 对镓掺杂纳米管场发射机理进行了探讨.
Carbon nanotubes and Ga-doped carbon nanotubes were synthesized by
pyrolysis and then purified. Thin films of the purified samples were fabricated
by a screen-printing method. Field emission properties of these films were
studied. It was shown that the turn-on field of carbon nanotubes and Ga-doped carbon nanotubes was 2.22V/μm and 1.0V/μm, and the current densities were 400μA/cm2 and 4000μA/cm2 for carbon nanotubes and Ga-doped carbon nanotubes at applied fields 2.4V/μm. The electron field emission properties of the gallium-doped nanotubes were much better than those of carbon nanotubes. Mechanisms of field emission of gallium-doped nanotubes were explained.
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