研究论文

介孔复合半导体NiO-TiO2的制备与光响应性能

  • 王希涛 ,
  • 贺 忠 ,
  • 钟顺和
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  • 天津大学 化工学院, 天津 300072

收稿日期: 2008-06-24

  修回日期: 2008-09-07

  网络出版日期: 2009-03-20

Preparation and Photo Absorption Property of Coupled Semiconductor NiO-TiO2

  • WANG Xi-Tao ,
  • HE Zhong ,
  • ZHONG Shun-He
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  • College of Chemical Engineering and Technology,Tianjin University,Tianjin 300072,China

Received date: 2008-06-24

  Revised date: 2008-09-07

  Online published: 2009-03-20

摘要

采用模板剂法制备了系列NiO-TiO2复合半导体,用N2吸附-脱附、XRD、TPR、TEM和UV-Vis DRS等方法对半导体材料的孔结构、表面构造、能带结构与其吸光特性进行了分析. 结果表明:所制备的NiO-TiO2为介孔结构的纳米管或带,其比表面积超过100m2/g;NiO在TiO2表面分散均匀,并部分形成NiTiO3固熔体;NiO与TiO2间存在明显的复合效应,当NiO含量由2%增加至10%时,其Eg值由3.82eV降至3.49eV,有效地拓展了光响应范围.

本文引用格式

王希涛 , 贺 忠 , 钟顺和 . 介孔复合半导体NiO-TiO2的制备与光响应性能[J]. 无机材料学报, 2009 , 24(2) : 215 -220 . DOI: 10.3724/SP.J.1077.2009.00215

Abstract

NiO-TiO2 coupled semiconductors were synthesized by organic templates method.Their pore distribution, crystal structure,surface composition and photo absorption properties were investigated by techniques of N2 adsorptiondesorption, XRD, TPR, TEM and UV-Vis DRS. The results show that the NiO-TiO2 coupled semiconductors prepared by organic templates exist in nanotube or nanobelt with mesporous structure, and the BET surface area is higher than 100m2/g. The NiO particles disperse well on the surface of TiO2, and the strong interaction between NiO and TiO2 results in the formation of NiTiO3. The p-n couple effect of NiO and TiO2 extends distinctly the photo absorption field and decreases the Eg from 3.82eV to 3.49eV when the addition amout of NiO is increased from 2% to 10%.

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