研究论文

CuO/SiO2复合薄膜的微观结构和发光特性分析

  • 石 锋 ,
  • 李玉国 ,
  • 孙钦军
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  • 山东师范大学 物理与电子科学学院, 济南 250014

收稿日期: 2008-06-24

  修回日期: 2008-09-25

  网络出版日期: 2009-03-20

Analysis to Microstructure and PhotoLuminescent Properties of CuO/SiO2 Composite Thin Films

  • SHI Feng ,
  • LI Yu-Guo ,
  • SUN Qin-Jun
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  • College of Physics and Electronic, Shandong Normal University, Jinan 250014, China

Received date: 2008-06-24

  Revised date: 2008-09-25

  Online published: 2009-03-20

摘要

采用射频磁控共溅射法在硅衬底上沉积Cu/SiO2 复合薄膜,然后在N2保护下高温退火,再于空气中自然冷却氧化,制备出低维CuO纳米结构,并对其微观结构和光致发光进行研究. 退火温度为1100℃时样品中主晶相为立方晶系的CuO(200)晶面,薄膜样品表面出现纳米线状结构,表面组分主要包括Cu、O元素,冷却氧化形成CuO/SiO2复合薄膜. 该温度下退火后,光致发光谱中出现紫外光和紫光,这是由于复合薄膜中CuO的导带底到Cu空穴缺陷能级的跃迁导致的.

本文引用格式

石 锋 , 李玉国 , 孙钦军 . CuO/SiO2复合薄膜的微观结构和发光特性分析[J]. 无机材料学报, 2009 , 24(2) : 234 -238 . DOI: 10.3724/SP.J.1077.2009.00234

Abstract

Cu/SiO2 composite thin films were deposited on n-type Si(111) substrates by radio frequency (RF) magnetron cosputtering method, annealed at high temperature in N2 atmosphere, then cooling and oxidation in the air to fabricate low-dimensionality CuO nanostructure. The microstructure and photo luminescent properties were studied. The main phase of sample is cubic CuO(200) crystal face and sample forms nanoline structure with Cu, O elements as the main components to form CuO/SiO2 composite thin film in the sample surface after annealing at 1100℃. The ultraviolet light and purplelight appear in photoluminescence (PL) spectra, which is abscribed to the electron transition from the defect level,resulting from the Cu vacancies to the conductor band of CuO composite thin films.

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