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2006 , Vol. 21 >Issue 4: 1011 - 1017

DOI: https://doi.org/10.3724/SP.J.1077.2006.01011

研究论文

ZnO陶瓷靶制备及其薄膜 RF溅射工艺研究

  • 陈祝 ,
  • 张树人 ,
  • 杜善义 ,
  • 杨成韬 ,
  • 郑泽渔 ,
  • 李波 ,
  • 孙明霞
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  • 1. 成都信息工程学院通信工程系, 成都 610225;
    2. 电子科技大学微电子与固体电子学院, 成都 610054;
    3. 哈尔滨工业大学复合材料研究所, 哈尔滨 150001

收稿日期: 2005-08-01

  修回日期: 2005-09-15

  网络出版日期: 2006-07-20

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Li-doped ZnO Ceramic Target Preparation and RF Magnetron Sputtering ZnO Films

  • CHEN Zhu ,
  • ZHANG Shu-Ren ,
  • DU Shan-Yi ,
  • YANG Cheng-Tao ,
  • ZENG Ze-Yu ,
  • LI Bo ,
  • SUN Ming-Xia
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  • 1. Department of Telecommunication Engineering, Chengdu University of Information Technology, Chengdu 610225, China;
    2. School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
    3. Center for Composite Materials. Harbin Institute of Technology, Harbin 150001, China

Received date: 2005-08-01

  Revised date: 2005-09-15

  Online published: 2006-07-20

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摘要

利用固相反应制备了直径为70mm, 厚度为10～15mm高质量掺杂Li2CO2的ZnO陶瓷靶材, 实验了不同摩尔浓度的Li+掺杂对靶材性能的影响, 确定了最佳Li+掺杂量为2.2mol%, 同时通过在不同温度烧结实验、不同成型压力实验确定了ZnO靶材制备的最佳工艺, 并采用所制备的ZnO-Li2.2%陶瓷靶和RF(射频磁控)技术在Si(100)、玻璃(载玻片)、及Pt(111)/Ti/SiO2/Si(100)基片上制备出高度c轴(002)择优取向的ZnO薄膜, 其绝缘电阻率ρ为4.12×108Ω·cm, 达到了声表面波器件(SAW)的使用要求.

关键词： 陶瓷靶; 氧化锌薄膜; 射频磁控溅射; 择优取向

本文引用格式

陈祝 , 张树人 , 杜善义 , 杨成韬 , 郑泽渔 , 李波 , 孙明霞 . ZnO陶瓷靶制备及其薄膜 RF溅射工艺研究[J]. 无机材料学报, 2006 , 21(4) : 1011 -1017 . DOI: 10.3724/SP.J.1077.2006.01011

Abstract

We successfully prepared high quality Li-doped ZnO ceramic targets with 70mm in diameter and 10～15mm in depth by solid-state reactions. The paper studied the influence of different concentration of Li2CO3 on the electrical properties of ZnO ceramic target. By comparing and analyzing the IR( insulative resistivity ) and tgδ(dielectric loss), the optimum concentration of Li2CO3 doped in ZnO ceramic target was obtained(2.2%mol ratio). And the optimum process for preparing ZnO-Li2.2% ceramic target was also realized through the investigation of physics and electrics of ZnO ceramic under the different sintering temperatures and molding pressure treatments. By using Li2.2%-doped ZnO ceramic as the target, the ZnO films with highly c-axis (002) preferred orientation were grown by RF magnetron sputtering on Si(100), glass and Pt(111)/Ti/SiO2/Si(100) substrates respectively.

Key words： ceramic target; zinc oxide films; RF magnetron sputtering; preferred orientation

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