采用提拉法生长了掺杂浓度分别为4、8与10at%的Tm:YAP晶体. 测定了Tm3+在YAP基质中的分凝系数为0.88. 采用同步辐射的方法研究了Tm:YAP晶体的生长条纹和结构应力缺陷. 晶体的吸收峰位于694和795nm; 荧光谱峰值在2.0μm附近, 因此Tm:YAP晶体有望成为一种新型的适合LD泵浦的中红外激光材料.
YAP single crystals doped with 4at%, 8at% and 10at% Tm3+ ions were grown by the Czochralski method with MF induction heating. The segregation coefficient of Tm3+ ion in YAP crystal measured by X-ray fluorescence spectrum technique is about 0.88. Growth striation and structural stress were determined by synchrotron radiation white-beam topography (SRWBT). The absorption spectrum shows two peaks with wavelength of 694nm and 795nm, and the fluorescence peak is about 2.0μm, which suggest that Tm:YAP is one of the most promising mid-infrared laser crystals.
1 Elder I F, Payne M J P. Optics Communications, 1998, 145: 329-339.
2 Elder I F, Payne M J P. Optics Communications, 1998, 148: 265-269.
3 陆燕玲, 王俊, 孙宝德(LU Yan-Ling, et al). 无机材料学报(Journal of Inorganic Materials), 2005, 20 (3): 513-521.
4 李敢生, 施真珠, 陈莹, 等(LI Gan-Sheng, et al). 人工晶体学报(Journal of Synthetic Crystals), 1987, 16 (1): 33-37.
5 孙宝德, 陆燕玲, 王俊, 等. 中国, 发明专利, 公开号: 1560329, 2005-01-05.
6 张克从, 张乐#40. 晶体生长科学与技术(上册). 北京: 冶金工业出版社, 1997. 44-45.
7 Neuroth G, Wallrafen F. J. Crystal Growth, 1999, 198/199: 435-439.
8 中国科学院上海光机所晶体组. 激光(J. Lasers), 1978, 5 (3): 37-43.