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2006 , Vol. 21 >Issue 2: 453 - 458

DOI: https://doi.org/10.3724/SP.J.1077.2006.00453

研究论文

纳米Cu2O/TiO2 异质结薄膜电极的制备和表征

  • 唐一文 ,
  • 陈志钢 ,
  • 张丽莎 ,
  • 贾志勇 ,
  • 张新
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  • 1. 华中师范大学纳米科技研究院, 武汉430079;
    2. 复旦大学先进材料实验室, 上海 200433

收稿日期: 2005-03-07

  修回日期: 2005-05-09

  网络出版日期: 2006-03-20

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Preparation and Characterization of Nanocrystalline Cu2O/TiO2 Heterojunction Film Electrode

  • TANG Yi-Wen ,
  • CHEN Zhi-Gang ,
  • ZHANG Li-Sha ,
  • JIA Zhi-Yong ,
  • ZHANG Xin
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  • 1. Institute of Nano-science and Technology, Central China Normal University,
    Wuhan 430079, China;
    2. Laboratory of Advanced Materials, Fudan University, Shanghai 200433,China

Received date: 2005-03-07

  Revised date: 2005-05-09

  Online published: 2006-03-20

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摘要

通过阴极还原在纳米TiO2膜上电沉积Cu2O, 获得了p-Cu2O/n- TiO2异质结电极. 研究了沉积温度对Cu2O膜厚、纯度和形貌的影响, 制备出纯度较高、粒径为40～50nm的Cu2O薄膜. 纳米Cu2O膜在200℃烧结后透光性最好, 禁带宽度为2.06eV. 光电化学测试表明纳米p-Cu2O/n-TiO2异质结电极呈现较强的n-型光电流响应并且能够提高光电转换效率.

关键词： 氧化亚铜薄膜; 二氧化钛膜; 异质结电极; 光电化学

本文引用格式

唐一文 , 陈志钢 , 张丽莎 , 贾志勇 , 张新 . 纳米Cu2O/TiO2 异质结薄膜电极的制备和表征[J]. 无机材料学报, 2006 , 21(2) : 453 -458 . DOI: 10.3724/SP.J.1077.2006.00453

Abstract

TiO2 film; heterojunction electrode; photoelectrochemistryThis paper introduced the electrochemical deposition of Cu2O thin films on TiO2 films by cathodic reduction to form p-Cu2O/n-TiO2 heterostructure electrode. The effects of bath temperature on film thickness, purity and morphology of Cu2O films were studied. Pure spherically shaped Cu2O grains with 40～50nm diameter were obtained. It is found that annealing at 200℃ can improve the spectral transmittance of the Cu2O film and the film has a band gap of 2.06eV. The measurements of photoelectrochemical behavior of the nanocrystalline p-Cu2O/n-TiO2 heterostructure electrode show that such heterostructure electrode produces strong n-type spectral response and can improve the photoelectron conversion efficiency.

Key words： TiO2 film; heterojunction electrode; photoelectrochemistry

参考文献

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