激光诱导击穿光谱测量重掺硅中的氧含量
收稿日期: 2010-01-28
修回日期: 2010-04-07
网络出版日期: 2010-07-19
基金资助
Zhejiang Provincial Scientific Projects (2008F70015, 2009C31007)
Determination of Oxygen Concentration in Heavily Doped Silicon Wafer by Laser Induced Breakdown Spectroscopy
Received date: 2010-01-28
Revised date: 2010-04-07
Online published: 2010-07-19
季振国, 席俊华, 毛启楠 . 激光诱导击穿光谱测量重掺硅中的氧含量[J]. 无机材料学报, 2010 , 25(8) : 893 -896 . DOI: 10.3724/SP.J.1077.2010.10074
Laser-induced breakdown spectroscopy (LIBS) has been applied to determine the oxygen concentration in heavily doped silicon wafer by using a high power pulsed laser and an optical fibre coupled CCD spctrometer. The relative concentration of oxygen in the heavily doped silicon wafer was calculated by the ratio of the integral intensity of the OI emission of oxygen to the SiI emission silicon from the LIBS spectra. A calibration curve was obtained by comparing the oxygen concentration determined by LIBS with the oxygen concentration determined by conventional FTIR technique used in Si industies, in which a set of four lightly doped CZ silicon wafers were used. Based on the calibration curve, quantitative oxygen concentration in several heavily doped silicon samples was measured.
Key words： LIBS; oxygen concentration; heavily doped silicon
[1]Macdonald D, Rougieux F, Cuevas A, et al. Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon.Journal of Applied Physics,2009, 105(9):093704-1
[2]Falster R, Voronkov V V, Quast F. On the properties of the intrinsic point defects in silicon: a perspective from crystal growth and wafer processing.Physica Status Solidi B,2000, 222(1):219-244
[3]Joly J P, Robert V. Influence of the first thermal cycles of an IC process on oxygen precipitation in CZ silicon wafers: a detailed analysis.Semiconductor Science and Technology,1994, 9(1):105-111
[4]Uchiyama H, Matsumoto K, Mchedlidze T, et al. N+P junction leakage current caused by oxygen precipitation defects and its temperature dependence.Journal of the Electrochemical Society,1999, 146(6):2322-2327
[5]Brinkevich D I, Vabishchevich S A, Vabishchevich N V, et al. Strength degradation of silicon diffusion-doped with gold.Inorganic Materials,2009, 45(4):343-346
[6]Borghesi A, Pivac B, Sassella A, et al. Oxygen precipitation in silicon.Journal of Applied Physics,1995, 77(9):4169-4244
[7]Chen J, Yang D, Ma X, et al. Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon.Applied Physics A,2009, 94(4):905-910
[8]Kim I, Kwon J. Reduction of grown-in defects by vacancy-assisted oxygen precipitation in high density dynamic random access memory.Applied Physics Letters,2003, 83(23):4863-4865
[9]Liu Z, Masuda A, Kondo M. Investigation on the crystal growth process of spherical Si single crystals by melting.Journal of Crystal Growth,2009, 311(16):4116-4122
[10]Veve C, Stemmer M, Martinuzzi S. Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopy.Materials Science and Engineering B,1996, 36(1/2/3):200-203
[11]Berghmans B, Vandervorst W. The effect of oxygen during irradiation of silicon with low energy Cs+ ions.Journal of Applied Physics,2009, 106(3):033509-1
[12]Gondal M A, Hussain T, Yamani Z H, et al. On-line monitoring of remediation process of chromium polluted soil using LIBS.Journal of Hazardous Materials,2009, 163(2/3):1265-1271
[13]Pandhija S, Rai A K. In situ multielemental monitoring in coral skeleton by CF-LIBS.Applied Physics B,2009, 94(3):545-552
[14]Muravitskaya E V, Rosantsev V A, Belkov M V, et al. Laser ablation in liquids as a new technique of sampling in elemental analysis of solid materials.Spectrochimica Acta Part B,2009, 64(2):119-125
[15]Liu S L, Godwal Y, Taschuk M T, et al. Detection of lead in water using laser-induced breakdown spectroscopy and laser-induced fluorescence.Analytical Chemistry,2008, 80(6):1995-2000
[16]Amodeo T, Dutouquet C, Tenegal F, et al. On-line monitoring of composite nanoparticles synthesized in a pre-industrial laser pyrolysis reactor using laser-induced breakdown spectroscopy.Spectrochimica Acta Part B,2008, 63(10):1183-1190
[17]Dalyander P S, Gornushkin I B, Hahn D W. Numerical simulation of laser-induced breakdown spectroscopy: modeling of aerosol analysis with finite diffusion and vaporization effects.Spectrochimica Acta Part B,2008, 63(2):293-304
[18]Cho H, Kim Y, Jo Y, et al. Application of laser-induced breakdown spectrometry for direct determination of trace elements in starch-based flours.Journal of Analytical Atomic Spectrometry,2007, 16(6):622-627
[19]Rosenwasser S, Asimellis G, Bromley B, et al. Development of a method for automated quantitative analysis of ores using LIBS.Spectrochimica Acta Part B,2001, 56(6):707-714
[20]St-Onge L, Sabsabi M, Cielo P. Analysis of solids using laser- induced plasma spectroscopy in double-pulse mode.Spectro-chimica Acta Part B,1998, 53(3):407-415
[21]Ralchenko Yu, Jou F C, Kelleher D E, et al. NIST Atomic Spectra Database. 2008.
[22]Porrini M, Rossetto P. Influence of thermal history during Czochralski silicon crystal growth on OISF nuclei formation. Materials Science and Engineering B, 1996, 36(1/2/3): 62-66.
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