钽电容器用钽壳内壁RuO2薄膜电极的表征及电化学性能
收稿日期: 2009-12-17
修回日期: 2010-03-21
网络出版日期: 2010-07-19
基金资助
国家863高技术项目(2007AA03Z240)
Characterization and Electrochemical Properties of RuO2 Film Electrode on the Inner-wall of Tantalum Shell for Capacitor
Received date: 2009-12-17
Revised date: 2010-03-21
Online published: 2010-07-19
甘卫平, 刘继宇, 刘 泓, 李 祥, 马贺然 . 钽电容器用钽壳内壁RuO2薄膜电极的表征及电化学性能[J]. 无机材料学报, 2010 , 25(8) : 882 -886 . DOI: 10.3724/SP.J.1077.2010.00882
Using the methods of coated and thermal decomposed ruthenium chloride, the RuO2 thin film was synthesized on the inner-wall surface of tantalum shell. Its morphology and structure were characterized by scanning electron microscope and X-ray diffraction. The electrochemical performances of the RuO2 thin film electrode were tested by cyclic voltammetry, galvanostatic charging/discharging and electrochemical impedance spectroscope. The results show that the RuO2 thin film calcinated at 280℃ has amorphous structure and the specific capacitance of the electrode is 212F/g (in 0.5 mol/L H2SO4 electrolyte) with good electrochemical performance. When the films are assembled into ST3 type 60 V 330 μF tantalum capacitors, the capacitance can still maintain 345μF after celaring and electrical aging. The equivalent series resistance (ESR) is less than 1Ω and the leakage current is less than10μA.
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