MTS/H2体系CVD SiC的气相分析
收稿日期: 2009-11-25
修回日期: 2010-03-15
网络出版日期: 2010-07-19
基金资助
国家重点基础研究发展计划(973) (50820145202)
Analysis of Gaseous Species in Chemical Vapor Deposition of SiC from MTS/H2
Received date: 2009-11-25
Revised date: 2010-03-15
Online published: 2010-07-19
采用CG/MS定性定量分析了MTS/H2体系CVD SiC的气相组成, 考察了沉积温度、总压和流量对气相组成的影响, 从反应速率和分子浓度大小的角度出发, 分析了MTS在H2中的分解步骤. 主要结论如下: (1) 检测到CH4、C2H6、C2H4、C3H6、C2H2、MTS、SiCl4和CH3SiHCl2物质, 其中CH4和SiCl4的含量较高. (2) 体系温度、总压和总流量对气相组成有显著影响, 其影响规律与热力分析结果一致. (3) MTS主要以Si-C键断裂引发分解反应, 经历与原反应气反应、中间物质和副产物生成等主要阶段, CH3®C2H6®C2H4®C2H2是生成烷烃化合物的主要路径.
卢翠英, 成来飞, 赵春年, 张立同 . MTS/H2体系CVD SiC的气相分析[J]. 无机材料学报, 2010 , 25(8) : 845 -850 . DOI: 10.3724/SP.J.1077.2010.00845
Qualitative and quantitative analyses were carried out to investigate the effect of the deposition temperature, pressure and flow rate of chemical vapor deposition imposed on the concentrations of MTS/H2 CVD SiC gaseous species through GC/MS method. Decomposition procedures of MTS in H2 based on the reaction rate and concentrations of species were analyzed. The results show that: (1) the identified gaseous species are CH4、C2H6、C2H4, C3H6, C2H2, MTS, SiCl4 and CH3SiHCl2, of which the concentrations of CH4 and SiCl4 are comparatively higher; (2) temperature, pressure and flow rate have great effect on the concentrations of gaseous species, and their regular patterns follow the same dependence as the thermodynamics; (3) MTS mainly starts with the cracking and decomposition of Si-C, and experiences three stages, the reaction with H2, the formation of middle objects and also by-products. It is suggested that the main formation route of alkane is CH3®C2H6®C2H4®C2H2.
Key words： GC/MS; analysis of gaseous species; CVD SiC; MTS/H2
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