铋硼玻璃掺杂对ZnO-Bi2O3-TiO2系压敏电阻性能影响
收稿日期: 2009-12-10
修回日期: 2010-02-05
网络出版日期: 2010-07-19
基金资助
新世纪优秀人才支持项目(NCET-07-0329)
Influences of Bi2O3-B2O3 Glass Doping on Properties of ZnO-Bi2O3-TiO2-based Varistors
Received date: 2009-12-10
Revised date: 2010-02-05
Online published: 2010-07-19
研究了铋硼玻璃掺杂对ZnO-Bi2O3-TiO2系压敏电阻微观结构和非线性特性的影响. 由SEM结果可知: 在900℃烧结时, 低熔点铋硼玻璃通过液相烧结机制能够促进氧化锌晶粒生长和提高晶粒分布的均匀性; 然而, 未熔融的锌硼玻璃通过颗粒阻滞机理阻碍了氧化锌压敏陶瓷晶粒的生长. 当铋硼玻璃掺杂量为2wt%时, 可以得到最佳非线性特性: 电位梯度E1mA= 124.9V/mm, 非线性系数α=46.2, 漏电流密度JL= 0.2μA/cm2. 对铋硼玻璃掺杂压敏电阻来说, 其晶粒生长动力学指数和激活能Q要远小于锌硼玻璃掺杂压敏电阻, 仅为n≈2.15和146.2 kJ/mol. 以上分析表明: 与锌硼玻璃相比, 铋硼玻璃能够更有效的促进氧化锌晶粒生长, 改善ZnO-Bi2O3-TiO2系压敏电阻的微观结构, 提高非线性特性.
万 帅, 吕文中 . 铋硼玻璃掺杂对ZnO-Bi2O3-TiO2系压敏电阻性能影响[J]. 无机材料学报, 2010 , 25(8) : 811 -814 . DOI: 10.3724/SP.J.1077.2010.00811
The influences of Bi2O3-B2O3 glass additives on the microstructure and nonlinear electrical properties of ZnO-Bi2O3-TiO2-based varistor were investigated. SEM images show that low melting Bi2O3-B2O3 glass can help to increase ZnO grain size and refine microstructure with uniform grain size distribution at 900℃ through liquid phase sintering mechanism, whereas the grain size decreases with increasing ZnO-B2O3 glass addition resulting from non-melting ZnO-B2O3 glass pining the ZnO grain boundaries. The varistor ceramics with 2wt% Bi2O3-B2O3 glass addition own best nonlinear electrical properties with voltage gradient E1mA=124.9V/mm, nonlinear coefficient α=46.2, leakage current density JL=0.2μA/cm2. For Bi2O3-B2O3 glass doped varistor, kinetic exponent nB and apparent activation energy QB are only 2.15 and 146.2kJ/mol which are much lower than that of ZnO-B2O3 glass doped varistor. The results reveal that Bi2O3-B2O3 glass doping is more effective in improving the microstructure and electrical properties of ZnO-Bi2O3-TiO2-based varistor than ZnO-B2O3 glass doping.
[1]Clarke D R. Varistor ceramics. J. Am. Ceram. Soc., 1999, 82(3): 485-502.
[2]张丛春, 周东祥, 龚树萍. 低压ZnO压敏电阻材料研究及发展概况. 功能材料, 2001, 32(4): 343-347.
[3]钟明峰, 钱 皆, 庄 严. 多层片式压敏电阻器及其应用. 电子元器件应用, 2002, 4(7): 7-13.
[4]王兰义, 吕呈祥, 景志刚, 等. 多层片式压敏电阻器的应用. 传感器与微系统, 2006, 25(5): 1-4.
[5]张 虎, 曹全喜, 孟锡俊, 等. 共沉淀法制备ZnO压敏电阻复合添加剂. 光电材料, 2009, 22(5): 78-83.
[6]Huang Y Q, Liu M D, Zeng Y K, et al. Preparation and properties of ZnO-based ceramic films for low-voltage varistors by novel Sol-Gel process.Mater. Sci. Eng., B,2001, 86(3):232-236
[7]刘素琴, 黄可龙, 宋志方, 等(LIU Su-Qin, et al). Sol-Gel法制备ZnO压敏陶瓷及其电性. 无机材料学报(Journal of Inorganic Materials), 2000, 15(2): 376-380.
[8]刘宏玉, 孔 慧, 蒋冬梅, 等(LIU Hong-Yu, et al). 高能球磨法制备氧化锌压敏电阻的低温烧结. 硅酸盐学报(Journal of the Chinese Ceramic Society), 2006, 34(4): 483-486.
[9]Lee W C, Liu K S, Lin I N. Nonlinear electrical properties of ZnO varistors fast-fired by using millimeter-wave sintering process.J. Mater. Sci,2000, 35(19):4841-4847
[10]吴 隽, 谢长生, 黄开金, 等(WU Jun, et al). 掺杂ZnO-V2O5压敏电阻的低温烧结. 无机材料学报(Journal of Inorganic Materials), 2004, 19(1): 239-243.
[11]万 帅, 吕文中(WAN Shuai, et al). 锌硼玻璃掺杂低压ZnO压敏电阻电性能及晶粒生长动力学研究. 无机材料学报(Journal of Inorganic Materials), 2010, 25(2): 151-156.
[12]Tsai J K, Wu T B. Microstructure and nonohmic properties of binary ZnO-V2O5 ceramics sintered at 900℃.Mater. Lett,1995, 26(3):199-203
[13]Han J, Martas P Q, Senos A M R. Grain growth in Mn-doped ZnO.J. Eur. Ceram. Soc,2000, 20(16):2753-2758
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