高级检索
无机材料学报

无机材料学报 >

2010 , Vol. 25 >Issue 4: 391 - 395

DOI: https://doi.org/10.3724/SP.J.1077.2010.00391

研究论文

激光化学气相沉积快速生长高取向TiNx薄膜的研究

  • 公衍生 ,
  • 涂 溶 ,
  • 後藤孝
展开
  • 1. 中国地质大学 （武汉） 教育部纳米矿物材料及应用工程研究中心 材料科学与化学工程学院, 武汉 430074; 2. 日本东北大学 金属材料研究所, 仙台 980-8577

收稿日期: 2009-07-21

  修回日期: 2009-09-15

  网络出版日期: 2010-04-27

收起

High-speed Deposition of Oriented TiNx Films by Laser Metalorganic Chemical Vapor Deposition

  • GONG Yan-Sheng ,
  • TU Rong ,
  • GOTO Takashi
Expand
  • 1. Engineering Research Center of Nano-geomaterials of Ministry of Education, School of Materials Science and Chemical Engineering, China University of Geosciences, Wuhan 430074, China; 2. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Received date: 2009-07-21

  Revised date: 2009-09-15

  Online published: 2010-04-27

Fold

摘要

采用激光化学气相沉积（LCVD）技术在氧化铝衬底上制备了高取向的TiNx薄膜,重点研究了激光功率（PL）、衬底预热温度（Tpre）和沉积总压力（Ptot）对薄膜取向和沉积速率的影响,采用X射线衍射（XRD）、俄歇能谱（AES）和场发射扫描电镜（FESEM）对薄膜组成和结构进行了表征.结果表明：所得到的TiNx薄膜成分均匀,其取向与衬底预热温度有关,随着预热温度的升高,TiNx薄膜的取向由（111）变为（200）,薄膜的取向与其微观结构一致.TiNx薄膜的沉积速率随着激光功率升高而增大,在PL=100W时,达到最大值90μm/h（沉积面积为300mm2）,显著高于采用其它方法制备的TiNx薄膜.

关键词： TiNx薄膜; 快速生长; 取向; 激光化学气相沉积（LCVD）

本文引用格式

公衍生 , 涂 溶 , 後藤孝 . 激光化学气相沉积快速生长高取向TiNx薄膜的研究[J]. 无机材料学报, 2010 , 25(4) : 391 -395 . DOI: 10.3724/SP.J.1077.2010.00391

Abstract

TiNx films were prepared on Al2O3 substrates by laser chemical vapor deposition (LCVD). The effects of laser power (PL), pre-heatment temperature (Tpre) and total pressure in the main chamber (Ptot) on the orientation and deposition rate (Rdep) of TiNx films were investigated. The deposited TiNx films were characterized by Xray diffraction (XRD), atomic emission spectrometry (AES) and field emission scanning electron microscope (FESEM). The results showed that the composition in TiNx films was uniform, and the orientation was relative to the Tpre, which changed from (111) to (200) orientation with increasing Tpre. The orientation was consistent with its microstructure. The Rdep of TiNx films increased with increasing PL, showing a maximum (90μm/h) at PL = 100W at a deposition area of about 300mm2, which was higher than that of TiNx films prepared by other methods.

Key words： TiNx films; highspeed deposition; orientation; laser chemical vapor deposition (LCVD)

参考文献

[1］Wagner J, Mitterer C, Penoy M, et al. The effect of deposition temperature on microstructure and properties of thermal CVD TiN coatings. International Journal of Refractory Metals & Hard Materials, 2008, 26 (2): 120-126.
［2］Shimada S, Takahashi M, Tsujino J, et al. Deposition and wear resistance of Ti-B-N-C coatings on WCCo cutting tools from alkoxide solutions by thermal plasma CVD. Surf. Coat. Tech., 2007, 201(16/17): 7194-7200.
［3］Bonitz J, Schulz S E, Gessner T. Ultra thin CVD TiN layers as diffusion barrier films on porous low-k materials. Microelectron. Eng., 2004, 76(1-4): 82-88.
［4］Shimada S, Takada Y, Tsujino J. Deposition of TiN films on various substrates from alkoxide solution by plasmaenhanced CVD. Surface & Coatings Technology, 2005, 199(1): 72-76.
［5］Yun J Y, Rhee S W. Effect of the carrier gas on the metalorganic chemical vapor deposition of TiN from tetrakisdimethylamidotitanium. Thin Solid Films, 1998, 320(2): 163-165.
［6］Borah S M, Pal A R, Bailung H, et al. Optimization of plasma parameters for high rate deposition of titanium nitride films as protective coating on bellmetal by reactive sputtering in cylindrical magnetron device. Applied Surface Science, 2008, 254(18): 5760-5765.
［7］Goto T. Thermal barrier coatings deposited by laser CVD. Surface & Coatings Technology, 2005, 198(1/2/3): 367-371.
［8］Ishihara S, Hanabusa M. Laserassisted chemical vapor deposition of titanium nitride films. J. Appl. Phys., 1998, 84(1): 596-599.
［9］Conde O, Silvestre A J. Laserassisted deposition of thin films from photoexcited vapour phases. Appl. Phys. A, 2004, 79(3): 489-497.
［10］Lópeza J M, GordilloVázquez F G, Bhme O, et al. Low grain size TiN thin films obtained by low energy ion beam assisted deposition. Applied Surface Science, 2001, 173(3/4): 290-295.
［11］Shin H K, Shin H J, Lee J G, et al. MOCVD of titanium nitride from a new precursor Ti［N(CH3)C2H5］4. Chemistry materials, 1997, 9(1): 76-80.
［12］Gong Y S, Tu R, Goto T. Microstructure and preferred orientation of titanium nitride films prepared by laser CVD. Materials Transactions, 2009, 50(8): 2028-2034.
［13］Patil P S, Chigare P S, Sadale S B, et al. Thicknessdependent properties of sprayed iridium oxide thin films. Mater.Chem. Phys., 2003, 80(3): 667-675.
［14］Pelleg J, Zevin L Z, Lungo S, et al. Reactivesputterdeposited TiN films on glass substrates. Thin Solid Film, 1991, 197(1/2): 117-128.
［15］Pangarov N A.On the crystal orientation of electrodeposited metals. Electrochem. Acta., 1964, 9: 721-726.
［16］Kim J S, Jun B H, Lee E J, et al. A comparative study on the properties of TiN films prepared by chemical vapor deposition enhanced by r.f. plasma and by electron cyclotron resonance plasma. Thin Solid Films, 1997, 292(1/2): 124-129.
［17］Raaijmakers I J, Vrtis R N, Sandhu G S, et al. Comparison of chemical vapor deposition of TiN using tetrakisdiethylaminotitanium and tetrakisdimethylaminotitanium. Proc. 1992 VLSI Multilevel Interconnect Conf., Santa Clara, CA, 1992:260.
［18］Sun S C, Tsai M H. Comparison of chemical vapor deposition of TiN using tetrakisdiethylaminotitanium and tetrakisdimethylaminotitanium. Thin Solid Films, 1994, 253(1/2): 440-444.
Options
文章导航

/

〈 〉