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2009 , Vol. 24 >Issue 6: 1105 - 1109

DOI: https://doi.org/10.3724/SP.J.1077.2009.01105

研究论文

硅衬底Al2O3∶Tb3+薄膜的制备及其发光性能

  • 石 涛 ,
  • 周 箭 ,
  • 申乾宏 ,
  • 杨 辉
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  • (1. 浙江大学 材料科学与工程学系, 杭州 310027; 2. 浙江林学院 理学院， 临安 311300)

收稿日期: 2009-03-11

  修回日期: 2009-06-19

  网络出版日期: 2010-04-22

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Preparation and Photoluminescence Properties of Tb3+-doped Al2O3 Films on Silicon Substrates

  • SHI Tao ,
  • ZHOU Jian ,
  • SHEN Qian-Hong ,
  • YANG Hui
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  • (1. Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; 2. School of Science, Zhejiang Forest University, Lin’an 311300, China)

Received date: 2009-03-11

  Revised date: 2009-06-19

  Online published: 2010-04-22

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摘要

采用溶胶凝胶法在硅衬底上制备了Al2O3∶Tb3+薄膜; 并采用DTA-TG、XRD、SEM、AFM及光致发光光谱对其进行了一系列表征; 分析了Al2O3∶Tb3+薄膜的发光机理， 探讨了热处理温度和Tb3+掺杂浓度对发光性能的影响规律. 研究结果表明, 采用溶胶凝胶法制备工艺, 制备了高发光强度的Al2O3∶Tb3+薄膜, 薄膜的最佳激发波长为240nm, Tb3+的最佳掺杂浓度为5mol%(Tb2O3/Al2O3=5mol%), 在240nm光激发下, 最强的发射峰出现在544nm附近; 并且制备的Al2O3∶Tb3+薄膜表面致密、平整且无裂纹产生, 表面粗糙度约为1.3nm, 有利于硅基光电子器件的制备和应用.

关键词： 溶胶-凝胶法; Al2O3∶Tb3+; 薄膜; 光致发光

本文引用格式

石 涛 , 周 箭 , 申乾宏 , 杨 辉 . 硅衬底Al2O3∶Tb3+薄膜的制备及其发光性能[J]. 无机材料学报, 2009 , 24(6) : 1105 -1109 . DOI: 10.3724/SP.J.1077.2009.01105

Abstract

Tb3+-doped Al2O3 films on silicon substrates were prepared by the sol-gel method. The Tb3+-doped Al2O3 films were characterized by differential thermal analysis/thermogravimetric analysis, X-ray diffraction, scanning electron microscope, atomic force microscope and photoluminescence spectra as well. The photoluminescence mechanism of Tb3+-doped Al2O3 films was analyzed. The effects of heat-treatment temperature and Tb3+ ion concentration on the luminescence property of Tb3+∶Al2O3 films were discussed. The results show that the prepared Al2O3∶Tb3+ film has high luminescence intensity, the optimum excitation wavelength is 240nm, the optimum concentration of Tb3+ dopant is 5mol%, and the main emission is at 544nm under excitation at 240nm. And the prepared Al2O3∶Tb3+ film has a dense, smooth and crack-free surface texture with a roughness of less than 1.3nm. It is suggested that the film is good enough for fabrication and application of silicon based photoelectronic devices.

Key words： sol-gel; Al2O3∶Tb3+; film; photoluminescence

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