研究了不同V5+含量Mg4(SbNb1-xVx)O9[MSNV, 0.05≤ x≤0.3]系陶瓷的烧结特性、微观结构和微波介电性能. 结果表明: 一定量V5+取代能够明显降低该陶瓷的烧结温度. 在所有组成范围内, XRD显示了单一刚玉型结构. 随V5+含量的增加, 样品的介电常数ε和品质因数Q·f先增大后减小, 样品的谐振频率温度系数τf逐渐减小, 这是由于V5+的取代使得B位键价增强所致. 在x=0.15, 1250℃烧结, 可获得εr=9.98, Q·f=20248GHz (8GHz), τf=-23.3×10-6·K-1的新型微波介质陶瓷.
The effects of V5+ substitution on the sintering characters, microstructure and microwave dielectric properties of Mg4(SbNb1-xVxO9 ceramics were investigated. Results show that a small amount of V5+ substitution for Nb5+ can lower the sintering temperature of Mg4(Nb2-xSbx)O9 drastically. In all composition range investigated, the sintered ceramics show single phase with corundum structure. With increasing of V5+ content, the dielectric constant (ε) and quality factor (Q·f) increase and thereafter decrease, respectively, the temperature coefficient of resonant frequencies τ f decreases which is due to the strengthened B site-bond valence caused by V5+ substitution. The ceramics with x=0.15 sintered at 1250℃ has a relative dielectric constant εr of 9.98, a quality factor Q·f value of 20248GHz (at 8GHz) and a temperature coefficient of resonant frequencies τ f value of --23.3×10-6K-1.
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