高级检索
无机材料学报

无机材料学报 >

2008 , Vol. 23 >Issue 1: 185 - 189

DOI: https://doi.org/10.3724/SP.J.1077.2008.00185

研究论文

平面显示用 ZnS型电致发光材料的制备研究

  • 王文邓 ,
  • 夏玉娟 ,
  • 王安宝 ,
  • 许钫钫 ,
  • 黄富强 ,
  • 林信平
展开
  • (中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室, 上海 200050)

收稿日期: 2007-01-31

  修回日期: 2007-04-03

  网络出版日期: 2008-01-20

收起

Preparation of the ZnS-type Electroluminescent Phosphor Used in Flat Panel Display Field

  • WANG Wen-Deng ,
  • XIA Yu-Juan ,
  • WANG An-Bao ,
  • XU Fang-Fang ,
  • HUANG Fu-Qiang ,
  • LIN Xin-Ping
Expand
  • (State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China)

Received date: 2007-01-31

  Revised date: 2007-04-03

  Online published: 2008-01-20

Fold

摘要

通过高温(1100℃)固相反应、球磨(t=0~180min)和低温(750℃)退火处理制备了平面显示用ZnS:Cu电致发光材料. 用X射线衍射、紫外-可见吸收光谱、扫描电镜、光致发光光谱对所得样品进行了分析. 在100V和400Hz条件下, 通过测试电致发光屏的性能, 研究了材料的电致发光特性. 结果表明, 球磨使得材料的一些衍射峰强度降低和峰宽增大, 吸收边也略微红移. 随球磨时间的增加, 光致发光性能下降, 球磨180 min后光致发光亮度下降了约58%, 而电致发光亮度则从14.39cd/m2(t=0min)增至最优值90.13cd/m2(t=160min). 球磨造成的荧光粉内部的微结构缺陷是导致光致和电致发光性能发生变化的根本原因.

关键词： 光致发光; 电致发光; ZnS; 球磨

本文引用格式

王文邓 , 夏玉娟 , 王安宝 , 许钫钫 , 黄富强 , 林信平 . 平面显示用 ZnS型电致发光材料的制备研究[J]. 无机材料学报, 2008 , 23(1) : 185 -189 . DOI: 10.3724/SP.J.1077.2008.00185

Abstract

ZnS electroluminescent phosphors were prepared by high temperature (1100℃) solid state reaction, subsequently milling for some time (t=0-180min) and the final low temperature annealing process (750℃). The as-synthesized phosphors were characterized by X-ray powder diffraction, UV-Vis diffuse reflectance spectra, scanning electron microscope and photoluminescence spectra. Electroluminescence performance was investigated on the screen-printing electroluminescent lamp at 100V and 400Hz. Increased milling time leads to intensity reductions and width increases of some diffraction peaks, and results in slight red-shifts of the absorption edges. Photoluminescence brightness declines about 58% after milling for 180 min while electroluminescence brightness increases from 14.39cd/m2(t=0min) to the peak value 90.13cd/m2(t=160min). The changes of photoluminescence and electroluminescence performances originate from the defects in the microstructure induced by milling.

Key words： photoluminescence; electroluminescence; ZnS; milling

参考文献

[1] Rack P D, Holloway P H. Materials Science and Engineering R, 1998, 21 (4): 171--219.
[2] Wu X, Carkner D, Hamada H, et al. Proc. Society for Information Display
Conference, Seattle, USA, 2004. 1146--1149.
[3] Ono Y A. Electroluminescent Displays, Singapore: World Scientific, 1995.
[4] Manzoor K, Aditya V, Vadera S, et al. Solid State Communications, 2005, 135 (1--2): 16--20.
[5] Nien Y, Chen I. Applied Physics Letters, 2006, 89 (26): 19061--19063.
[6] Kim J P, Davidson M R, Puga-Lambers M, et al. Journal of Luminescence, 2004, 109 (2): 75--83.
[7] Brese N E, Rohrer C L, Rohrer G S. Solid State Ionics, 1999, 123 (1--4): 19--24.
[8] Manoharan S S, Mohammad Q. Physica Status Solids (a), 2005, 202 (6): 1124--1128.
[9] Ehlert O, Osvet A, Batentschuk M, et al. Journal of Physical Chemistry B, 2006, 110 (46): 23175--23178.
[10] Kawashima S. Japanese Journal of Applied Physics, 1966, 5 (12): 1161--1170.
[11] Arterton B, Brightwell J W, Mason S, et al. Journal of Crystal Growth, 1992, 117 (1--4): 1008--1011.
[12] Chander H, Shanker V, Haranath D, et al. Materials Research Bulletin, 2003, 38 (2): 279--288.
[13] Manzoor K, Vadera S, Kumar N, et al. Applied Physics Letters, 2004, 84 (2): 284--288.
[14] Armelao L, Camozzo D, Gross S, et al. Journal of Non-Crystalline Solids, 2004, 345--346: 402--406.
[15] Qadri S B, Skelton E F, Hsu D, et al. Physical Review B, 1999, 60 (13): 9191--9193.
[16] Fischer A G. Journal of the Electrochemical Society, 1962, 109 (11): 1043--1049.
[17] Fischer A G. Journal of the Electrochemical Society, 1963, 110 (7): 733--748.

Options
文章导航

/

〈 〉