研究论文

CaF2烧结助剂对热压烧结AlN-BN陶瓷复合材料的影响

  • 赵海洋 ,
  • 王为民 ,
  • 傅正义 ,
  • 王 皓
展开
  • (武汉理工大学材料复合新技术国家重点实验室, 武汉 430070)

收稿日期: 2006-12-31

  修回日期: 2007-03-26

  网络出版日期: 2008-01-20

Effect of CaF2 on AlN-BN Ceramic Composites by Hot-pressing

  • ZHAO Hai-Yang ,
  • WANG Wei-Min ,
  • FU Zheng-Yi ,
  • WANG Hao
Expand
  • (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

Received date: 2006-12-31

  Revised date: 2007-03-26

  Online published: 2008-01-20

摘要

用热压工艺制备了AlN-BN复合陶瓷材料, 研究了不同含量CaF2烧结助剂对致密化、介电和热导性能的影响. 研究表明: CaF2添加剂可促进材料致密化, 净化材料晶界, 优化材料的综合性能. 热压1850℃保温3h可获得高致密度的烧结体, 添加3wt%~4wt%的CaF2, 可获得98.53%~98.54%的相对密度. 制备的AlN-BN复合材料其介电常数在7.29~7.60之间, 介电损耗值最小为6.28×10-4, 添加3wt%的CaF2获得的热导率为10W·m-1·K-1.

本文引用格式

赵海洋 , 王为民 , 傅正义 , 王 皓 . CaF2烧结助剂对热压烧结AlN-BN陶瓷复合材料的影响[J]. 无机材料学报, 2008 , 23(1) : 99 -103 . DOI: 10.3724/SP.J.1077.2008.00099

Abstract

A series of samples of AlN-BN ceramic composites with different contents of sintering additives CaF2(0-4wt%) were prepared by hot-pressing in nitrogen atmosphere at 1850℃ for 3h. The effects of sintering additives on densification, dielectric properties and thermal conductivity of AlN-BN composites were explored. The addition of CaF2 results in improvements in the level of densification and purified the grain boundary. AlN-BN composites with relative density of 98.53%-98.54% are obtained when CaF2 contents are 3wt%-4wt%. Dielectric constants of samples are between 7.29 and 7.60 and the best tanδ value is 6.28×10-4. It is found that dielectric constants increase with the increasing CaF2 contents and depend on the density of
the AlN-BN ceramic composites. The highest thermal conductivity reach 110W·m-1·K-1 by adding 3wt% CaF2.

参考文献

[1] Shoichi Kume, Masaki Yasuoka, Naoki Omura, et al. International Journal of Refractory Metals & Hard Materials, 2005, 23 (4-6): 382-385.
[2] Slack G A. Journal of Physics and Chemistry of Solids, 1973, 34 (2): 321-335.
[3] 杜 帅, 李龙土, 刘 征, 等(Du Shuai, et al). 硅酸盐学报(Journal of the Chinese Ceramic Society), 1997, 25 (4): 433-439.
[4] 杜 帅, 李 发, 刘 征, 等(Du Shuai, et al). 硅酸盐学报(Journal of the Chinese Ceramic Society), 1998, 26 (4): 496-502.
[5] 李晓云, 施书哲, 丘 泰, 等. 电子元件与材料, 2003, 22 (6): 6-8.
[6] Takao Kanai, Kei Tanemoto, Hiroshi Kubo. Jpn. J. Appl. Phys., 1990, 29 (4): 683-687.
[7] Takao Kanai, Akiro Ando, Kei Tanemoto. Jpn. J. Appl. Phys., 1992, 31 (5): 1246-1247.
[8] Takao Kanai, Kei Tanemoto. Jpn. J. Appl. Phys., 1993, 32 (8): 3544-3548.
[9] 秦明礼, 曲选辉, 何新波, 等(QING Ming-Li, et al). 硅酸盐学报(Journal of the Chinese Ceramic Society), 2003, 30 (10): 913-917.
[10] Jin Hai-yun, Wang Wen, Gao Ji-qiang, et al. Materials Letters, 2006, 60 (2): 190-193.
[11] Chou W S, Lee Y H, Cho M W, et al. Key Engineering Materials, 2004, 264-268: 873-876.
[12] 叶乃清, 曾照强, 胡晓清, 等 (YE Nai-Qing, et al). 硅酸盐学报(Journal of the Chinese Ceramic Society), 1998, 26 (2): 265-268.
[13] Khor K A, Cheng K H, Yu L G, et al. Materials Science and Engineering A, 2003, 347 (1-2): 300-305.
[14] 沈春英, 唐惠东, 丘 泰, 等. 硅酸盐通报. 2003, (2): 11-15.
[15] 周和平, 周敬松(Zhou He-Ping, et al). 无机材料学报(Journal of Inorganic Materials), 1995, 10 (4): 439-444.
[16] Moulson A J, Herbert J M著, 李世普, 陈晓明, 樊东辉等译. 电子陶瓷: 材料·性能·应用, 第3版. 武汉: 武汉工业大学出版社, 1993. 82-83.
[17] Masahiko Tajika, Hideaki Matsubara, William Rafanicllo. J. Am. Ceram. Soc., 1999, 82 (6): 1573-1575.
文章导航

/