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2007 , Vol. 22 >Issue 4: 706 - 710

DOI: https://doi.org/10.3724/SP.J.1077.2007.00706

研究论文

V2O5对 BaTiO3-Y2O3-MgO陶瓷性能的影响

  • 李 波 ,
  • 张树人 ,
  • 周晓华
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  • 电子科技大学微电子与固体电子学院, 成都 610054

收稿日期: 2006-08-31

  修回日期: 2006-10-16

  网络出版日期: 2007-07-20

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Influence of V2O5 on the Properties of BaTiO3-Y2O3-MgO Ceramics

  • LI Bo ,
  • ZHANG Shu-Ren ,
  • ZHOU Xiao-Hua
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  • School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China

Received date: 2006-08-31

  Revised date: 2006-10-16

  Online published: 2007-07-20

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摘要

研究了V2O5掺杂BaTiO3-Y2O3-MgO系陶瓷的显微结构和介电性能. SEM显示V2O5会促进该体系晶粒生长, 降低陶瓷致密度. XRD显示V掺杂样品均为单一赝立方相, 其固溶度>1.0mol%. 研究表明, V离子能有效抑制掺杂离子Y、Mg向BaTiO3晶粒内扩散, 改变掺杂离子在晶粒中分布,
从而形成薄壳层的壳芯晶粒, 因此V能提高居里峰的强度并改善电容温度稳定性. 多价V离子在还原气氛中以+3、+4为主, 能增强瓷料的抗还原性, 提高绝缘电阻率(1013Ω·cm)、降低介电损耗(0.63%). 该体系掺杂0.1mol%V时, 介电常数达到2600, 满足X8R标准.

关键词： 钛酸钡; 五氧化二钒; 显微结构; 介电性能; 多层陶瓷电容器

本文引用格式

李 波 , 张树人 , 周晓华 . V2O5对 BaTiO3-Y2O3-MgO陶瓷性能的影响[J]. 无机材料学报, 2007 , 22(4) : 706 -710 . DOI: 10.3724/SP.J.1077.2007.00706

Abstract

The microstructure and dielectric properties of V2O5-doped BaTiO3-Y2O3-MgO ternary system were studied. SEM shows that V ions can promote grain growth of BaTiO3 based ceramics, but decrease the density of sintered ceramics. XRD indicates that V-doped
samples have pseudocubic structure and the solubility limit of V is more than 1.0mol%. The results show that V can increase the intensity of Curie peak and improve the temperature stability of dielectric constant, because of the formation of core-shell-grains with thin shell layer, which is attributed to the fact that V ions can effectively inhibit the diffusion of Y and/or Mg ions into BaTO3 grains and change the distribution of doping ions in the grains. Moreover multivalent V ions can reinforce the nonreducibility of this system, and the insulation resistivity increases to 1013Ω·cm and dielectric loss decrease to 0.63% consequently. The high performance materials with dielectric constant of 2600 satisfying the X8R
requirement is achieved when 0.1mol% V is added.

Key words： BaTiO3; V2O5; microstructure; dielectric properties; multilayer ceramic capacitor

参考文献

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