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2007 , Vol. 22 >Issue 3: 519 - 523

DOI: https://doi.org/10.3724/SP.J.1077.2007.00519

研究论文

Mn-Mg共掺杂对钛酸锶钡薄膜介电性能的影响

  • 周歧刚 ,
  • 翟继卫 ,
  • 姚熹
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  • 1. 同济大学功能材料研究所, 上海 200092; 2. 乐山师范学院物理与电子信息科学系, 四川乐山 614004

收稿日期: 2006-05-15

  修回日期: 2006-07-03

  网络出版日期: 2007-05-20

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Influence of Mn-Mg Co-doping on the Dielectric Properties of Barium Strontiun
Titanate Thin Film

  • ZHOU Qi-Gang ,
  • ZHAI Ji-Wei ,
  • YAO Xi
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  • 1. Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China; 2. Dept. of Physics & Electronic Information Science, Leshan Teacher’s College, Sichuan Leshan 614004, China

Received date: 2006-05-15

  Revised date: 2006-07-03

  Online published: 2007-05-20

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摘要

用溶胶-凝胶法在Pt/Ti/SiO 2/Si衬底上制备了系列Mn-Mg共掺杂的钛酸锶钡(Ba 0.25 Sr 0.75 TiO 3)薄膜. X射线衍射以及场发射扫描电镜分析表明: 薄膜为钙钛矿结构且无杂相生成, 薄膜表面晶粒均匀、无裂纹. 测试了不同浓度掺杂薄膜的介电性能, 掺杂浓度为1mol% 时, 薄膜的介电常数、损耗、可调性和漏电流密度分别为200、0.010、38%、1×10-5 A/cm 2. 性能改善后的薄膜材料可以用来制作微波可调器件.

关键词： BST薄膜; Mn－Mg共掺杂; 溶胶-胶方法; 介电性能

本文引用格式

周歧刚 , 翟继卫 , 姚熹 . Mn-Mg共掺杂对钛酸锶钡薄膜介电性能的影响[J]. 无机材料学报, 2007 , 22(3) : 519 -523 . DOI: 10.3724/SP.J.1077.2007.00519

Abstract

Undoped and Mn-Mg co-doped barium strontiun titanate (Ba0.25Sr0.75TiO3) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel technique. X-ray diffraction (XRD) analysis and FE- SEM reveal that the films exhibite a pure perovskite phasestructure, uniform grain sizes and crack-fee. The dielectric constant, loss, tunability and leakage current density are 200, 0.010, 38%, 1×10 -5 A/cm 2, respectively, at a 1mol% Mn-Mg content. The improved BST thin films can be used for tunable microwave devices.

Key words： BST thin film; Mn-Mg co-doping; sol-gel; dielectric property

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