高级检索
无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

SiO2-WO3纳米粉体的合成及其气敏特性

牛新书1; 魏少红2; 许亚杰1; 蒋凯1   

  1. 1. 河南师范大学化学与环境科学学院, 河南省高等学校环境科学与工程重点学科开放实验室, 新乡 453002; 2. 安阳师范学院化学系, 安阳 455000
  • 收稿日期:2002-07-01 修回日期:2002-10-08 出版日期:2003-07-20 网络出版日期:2003-07-20

Preparation and Gas Sensitivity Properties of xwt% SiO2-WO3

NIU Xin-Shu1; WEI Shao-Hong2; XU Ya-Jie1; JIANG Kai1   

  1. 1. College of Chemistry & Environmental Science; He nan Normal University; Key Laboratory of Environmental Science and Engineering; Education Commission of He nan; Xinxiang 453002; China; 2. Department of Chemistry; Anyang Normal University; Anyang 455000; China
  • Received:2002-07-01 Revised:2002-10-08 Published:2003-07-20 Online:2003-07-20

PDF (PC)

988

摘要： 采用化学沉淀法制备了xwt％SiO2-WO3(x=0,3,5,10,15)粉体材料,利用X射线衍射仪、透射电镜等测试手段分析了材料的微观结构,探讨了掺杂量、元件工作温度与WO3气敏性能的关系。研究发现:SiO2的掺杂提高了WO3粉体材料对H2S气体的灵敏度,其中掺杂量为5％的烧结型气敏元件在180℃下对H2S气体有较高的灵敏度和选择性;本文还对WO3的H2S气敏机理进行了探讨。

关键词: 二氧化钨, 气敏材料, 化学沉淀法, 硫化氢

Abstract: The powders of xwt%SiO2-WO3 were prepared by the chemical precipitation method, and their microstructures were characterized through XRD and TEM. The effects of SiO2 content and sensors operating temperature on the sensitivity were investigated. The mechanism of gas sensitivity of WO3 to H2S was also discussed. The results show that the sensitivity to H2S rises when SiO2 added. The sensor has high sensitivity and good selectivity to H2S when x=5 and the optimum working temperature is 180℃.

Key words: WO3, gas-sensing material, chemical precipitation, H2S

中图分类号: