原料对碳化硅单晶生长的影响

无机材料学报

原料对碳化硅单晶生长的影响

陈之战; 施尔畏; 肖兵; 庄击勇

中国科学院上海硅酸盐研究所上海 200050

收稿日期:2002-06-10 修回日期:2002-08-23 出版日期:2003-07-20 网络出版日期:2003-07-20

Effects of Raw Materials on the Growth of Silicon Carbide Single Crystal

CHEN Zhi-Zhan; SHI Er-Wei; XIAO Bing; ZHUANG Ji-Yong

Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China

Received:2002-06-10 Revised:2002-08-23 Published:2003-07-20 Online:2003-07-20

摘要/Abstract

摘要： 研究了具有立方结构的碳化硅(β-SiC)粉料在单晶生长过程中的物相变化及对生长晶体均匀性、缺陷等的影响。实验发现,在晶体生长过程中原料的晶型转变和Si、C挥发不一致造成晶体沿生长方向存在一个Si/C摩尔比的最大值。晶体中的针孔等缺陷的形成与原料中的杂质和气相组分偏离Si/C=1摩尔比有关,并通过电子探针得到证实。

关键词: 碳化硅原料, 碳化硅单晶, 相转变, Si/C摩尔比, 针孔

Abstract: SiC single crystal was grown by physical vapor transportation (PVT) technique using β-SiC raw materials. The phase transformation of raw materials during
the crystal growth was investigated by XRD. It was found that the phase transition from β-SiC to α-SiC was completed after growth of 30min. The molar
ratio of Si/C in the grown crystal was more than 1 and dependent on the growth time. The maximum value of Si/C was obtained at the intermediate growth process.
The formation of pinhole in the grown crystal was related to the deviation from stoichiometry of Si/C=1 in the vapor phase and the impurity of raw materials. It was confirmed by EDX analysis.

Key words: SiC raw materials, SiC single crystals, phase transition, Si/C ratio, pinhole

中图分类号:

陈之战,施尔畏,肖兵,庄击勇. 原料对碳化硅单晶生长的影响[J]. 无机材料学报.

CHEN Zhi-Zhan,SHI Er-Wei,XIAO Bing,ZHUANG Ji-Yong. Effects of Raw Materials on the Growth of Silicon Carbide Single Crystal[J]. Journal of Inorganic Materials.

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