面向VCSEL的Al0.98Ga0.02As薄膜湿法氧化的研究

doi:10.15541/jim20170130

无机材料学报 ›› 2018, Vol. 33 ›› Issue (3): 266-272.DOI: 10.15541/jim20170130 CSTR: 32189.14.10.15541/jim20170130

面向VCSEL的Al_0.98Ga_0.02As薄膜湿法氧化的研究

林涛¹, 张天杰¹, 李晶晶¹, 郭恩民¹, 宁少欢¹, 段玉鹏², 林楠³, 祁琼³, 马骁宇³

1. 西安理工大学电子工程系, 西安 710048;
2. 西北大学物理学院, 西安 710069;
3. 中国科学院半导体研究所, 光电子器件国家工程中心, 北京 100083

收稿日期:2017-03-22 修回日期:2017-07-07 出版日期:2018-03-20 网络出版日期:2018-03-12
基金资助:
国家自然科学基金(61306057);陕西省自然科学基础研究计划(2017JM6042)

Wet Oxidation Process to Al_0.98Ga_0.02As Layer for the Vertical-Cavity-Surface-Emitting-Laser Fabrications

LIN Tao¹, ZHANG Tian-Jie¹, LI Jing-Jing¹, GUO En-Min¹, NING Shao-Huan¹, DUAN Yu-Peng², LIN Nan³, QI Qiong³, MA Xiao-Yu³

1. College of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;
2. College of Physics, Northwestern University, Xi'an 710069, China;
3. National Engineering Research Center for Optoelectric Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2017-03-22 Revised:2017-07-07 Published:2018-03-20 Online:2018-03-12
Supported by:
National Natural Science Foundation of China (61306057);Natural Science Basic Research Plan in Shaanxi Province of China(2017JM6042)

摘要/Abstract

摘要：

为了系统研究VCSEL制作中的湿法氧化过程和机理, 设计了专门的材料结构并采用MOCVD技术进行外延生长。对经过光刻和干法刻蚀形成的台面结构样品进行不同时间的湿法氧化, 由表面形貌及断面结构来确定氧化程度。研究发现, 氧化时间较短时, Al_0.98Ga_0.02As层的横向氧化深度随氧化时间呈线性变化; 随着氧化时间增加, 横向氧化深度与氧化时间呈抛物线变化, 并渐趋于饱和。此外实验中发现Al_0.98Ga_0.02As层的湿法氧化速度可比Al_0.9Ga_0.1As层高一个数量级, 且Al_0.9Ga_0.1As层的湿法氧化速度随其层厚增加而增大。最后根据修正的一维Deal-Grove氧化模型计算了受限空间内Al_0.98Ga_0.02As层横向氧化深度随氧化时间的变化关系。

关键词: 垂直腔面发射激光器, 湿法氧化, 砷化铝镓, 金属有机化学气相淀积

Abstract:

To study the wet oxidation process and mechanism in the Vertical-Cavity-Surface-Emitting-Laser (VCSEL) fabrications, a special material structure was designed and grown by the Metal-Organic Chemical Vapor Deposition(MOCVD) method. The samples formed by photolithography and dry etching were subjected to wet oxidation for different time, and the oxidation degree was determined by the surface morphology and the cross-sectional structure. In this study, a linear tendency was revealed between oxidation depth and oxidation time during a relatively short oxidation period, then it transformed into parabolic tendency and gradually became saturated with increasing oxidation time. Moreover, it was found that the oxidation rate of Al_0.98Ga_0.02As was higher than that of Al_0.9Ga_0.1As layer by one order of magnitude, and the speed of oxidation processing was accelerated as the Al_0.9Ga_0.1As layer thickened. Finally, the lateral oxidation process of Al_0.98Ga_0.02As layer in the confined space was interpreted by a modified one-dimensional Deal-Grove model.

Key words: VCSEL, wet oxidation, AlGaAs, MOCVD

中图分类号:

TQ174

林涛, 张天杰, 李晶晶, 郭恩民, 宁少欢, 段玉鹏, 林楠, 祁琼, 马骁宇. 面向VCSEL的Al_0.98Ga_0.02As薄膜湿法氧化的研究[J]. 无机材料学报, 2018, 33(3): 266-272.

LIN Tao, ZHANG Tian-Jie, LI Jing-Jing, GUO En-Min, NING Shao-Huan, DUAN Yu-Peng, LIN Nan, QI Qiong, MA Xiao-Yu. Wet Oxidation Process to Al_0.98Ga_0.02As Layer for the Vertical-Cavity-Surface-Emitting-Laser Fabrications[J]. Journal of Inorganic Materials, 2018, 33(3): 266-272.

图/表 8

图1 湿法氧化实验的材料结构

Fig. 1 Material structure for wet oxidation experiment

图2 湿法氧化装置结构示意图

Fig. 2 Schematic diagram of wet-oxidation equipment

图3 材料结构的XRD图谱

Fig. 3 XRD pattern of the material structure

图4 材料结构的断面SEM照片

Fig. 4 Cross-section SEM images of the material structure(a) Lower part; (b) Upper part

图5 不同氧化时间各样品的表面形貌图

Fig. 5 Surface morphologies of the samples with different oxidation time (a) 15 min; (b) 20 min; (c) 25 min; (d) 30 min

图6 不同氧化时间各样品的断面图

Fig. 6 Cross-section SEM images of the samples with different oxidation time(a) 15 min; (b) 20 min; (c) 25 min; (d) 30 min

图7 材料结构氧化深度随氧化时间的变化关系

Fig. 7 Relationship between oxidation depth and oxidation time of the material structure

图8 台面结构中AlGaAs层氧化机理示意图

Fig. 8 Schematic diagram of the mechanism for AlGaAs oxidation in the mesa structure

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面向VCSEL的Al_0.98Ga_0.02As薄膜湿法氧化的研究

Wet Oxidation Process to Al_0.98Ga_0.02As Layer for the Vertical-Cavity-Surface-Emitting-Laser Fabrications

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面向VCSEL的Al0.98Ga0.02As薄膜湿法氧化的研究

Wet Oxidation Process to Al0.98Ga0.02As Layer for the Vertical-Cavity-Surface-Emitting-Laser Fabrications

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面向VCSEL的Al_0.98Ga_0.02As薄膜湿法氧化的研究

Wet Oxidation Process to Al_0.98Ga_0.02As Layer for the Vertical-Cavity-Surface-Emitting-Laser Fabrications