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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

纯CsI晶体发光特性

沈定中; 邓群; 袁湘龙; 张黎星; 殷之文   

  1. 中国科学院上海硅酸盐研究所; 上海200050
  • 收稿日期:1996-03-18 修回日期:1996-05-04 出版日期:1997-06-20 网络出版日期:1997-06-20

Luminescent Performances of Pure CsI Crystals

SHEN Dingzhong; DENG Qun; YUAN Xianglong; ZHANG Liring; YIN Zhiwen   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences Shanghai 200050 China
  • Received:1996-03-18 Revised:1996-05-04 Published:1997-06-20 Online:1997-06-20

PDF (PC)

981

被引次数

8

摘要： 测量了用Stockbager方法生长的纯CsI晶体的光学透射、X射线激发的发射谱、能谱特性和衰减时间特性．该晶体有二个闪烁分量，峰值位于310nm的发光分量是快分量（＜40ns），450um处的发光分量是慢分量（～2．4μs）．慢分量的发光强度不稳定，并受晶体中缺陷I-空位的影响较大．文中还给出快、慢发光强度比值91．8％．

关键词: 纯CaI晶体, 快闪烁体, 晶体缺陷

Abstract: The optical transmission, X-ray excited emission, energy spectra and decay time characteristics were measured for pure CsI crystals grown by Stockbarger process. The results show thatthe crystals has two scintillation components: a fast component peaked at 310um with <40nsdecay time and a slow component at 450um with ~2.4μs. The slow emission intensity is not stableand considerably thectcd by I- vacancy defects in the crystal. The intensity ratio of fast to slowcomponent obtAlNed is 91.8%.

Key words: pure CsI crystal, fast scintillator, crystal defect