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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

等离子体源增强磁控溅射沉积Al2O3薄膜研究

雷明凯; 袁力江; 张仲麟   

  1. 大连理工大学材料工程系表面工程研究室 大连 116024
  • 收稿日期:2001-06-11 修回日期:2001-07-24 出版日期:2002-07-20 网络出版日期:2002-07-20

Al2O3 Films Deposited by Plasma Source Enhanced Magnetron Sputtering

LEI Ming-Kai; YUAN Li-Jiang; ZHANG Zhong-Lin   

  1. Surface Engineering Laboratory; Department of Materials Engineering; Dalian University of Technology; Dalian 116024; China
  • Received:2001-06-11 Revised:2001-07-24 Published:2002-07-20 Online:2002-07-20

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摘要： 采用电子回旋共振微波等离子体源增强磁控溅射沉积氧化铝薄膜.X射线光电子谱和X射线衍射分析表明,在600℃沉积温度下,Si（100）基片上获得了亚稳的具有化学计量配比成分、面心立方结构的γ-Al2O3薄膜.薄膜的折射率为1.7,与稳定的α-Al2O3体材料相当.

关键词: 氧化铝薄膜, 等离子体源, 磁控溅射沉积, 折射率

Abstract: The aluminium oxide films were deposited on Si(100) substrate by plasma source enhanced magnetron sputtering by using an electron cyclotron resonance (ECR) microwave plasma source and a direct current magnetron sputtering target. X-ray photoelectron spectroscopy (XPS) and glancing angle X-ray diffraction patterns show that the metastable stoichiometric γ-Al2O3 films can be obtained at a higher deposition temperature of 600℃. The refractive index of the films is 1.7, corresponding with that of stable α-Al2O3.

Key words: aluminium oxide film, plasma source, magnetron sputtering, refractive index

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