等离子体基脉冲偏压沉积DLC膜的氢分布和氢含量

无机材料学报

等离子体基脉冲偏压沉积DLC膜的氢分布和氢含量

夏立芳¹; 孙明仁²

1. 哈尔滨工业大学433信箱; 2. 哈尔滨工业大学 ; 428信箱哈尔滨 150001

收稿日期:2001-07-16 修回日期:2001-09-03 出版日期:2002-07-20 网络出版日期:2002-07-20

Distribution and Content of Hydrogen in DLC Films Prepared by Plasma Based Pulsed Bias Deposition

XIA Li-Fang¹; SUN Ming-Ren²

1. 433 Pillar-Box; Harbin Institute of Technology; Harbin 150001; China; 2. 428 Pillar-Box; China

Received:2001-07-16 Revised:2001-09-03 Published:2002-07-20 Online:2002-07-20

摘要/Abstract

摘要： 用核反应分析方法,对等离子体基脉冲偏压沉积DLC膜的氢分布和氢含量进行了较系统的研究.结果表明,用等离子体基脉冲偏压沉积技术可获得较低氢含量的DLC膜;其氢含量范围约为6at％～17at％,且氢沿膜厚是均匀分布的,随等离子体密度及离化率降低,DLC膜的氢含量增加,荷能离子对生长表面的轰击具有较强的析氢作用,工作气体中引入氢气促进DLC膜中氢的析出.

关键词: DLC膜, 氢分布, 氢含量

Abstract: The distribution and content of hydrogen in DLC films prepared by plasma based pulsed bias deposition were characterized systematically by nuclear reaction
analysis (NRA). It was found that the DLC films with low hydrogen content can be obtained by plasma based bias deposition technique. The range of hydrogen
content in DLC films is about 6at% to 17at%, and the hydrogen distribution is equalization along the depth of films. With decrease in plasma density and
ionizability, the hydrogen contents in DLC films increase, however, the segregation of hydrogen in DLC films is promoted by hydrogen gas introduced into the working
gas. The dehydrogenation is promoted obviously by the energetic ions bombardment on growth surface.

Key words: DLC film, hydrogen distribution, hydrogen content

中图分类号:

O484

夏立芳,孙明仁. 等离子体基脉冲偏压沉积DLC膜的氢分布和氢含量[J]. 无机材料学报.

XIA Li-Fang,SUN Ming-Ren. Distribution and Content of Hydrogen in DLC Films Prepared by Plasma Based Pulsed Bias Deposition[J]. Journal of Inorganic Materials.