磁控溅射法可控制备有序碲纳米线阵列

doi:10.15541/jim20140371

摘要/Abstract

摘要：

采用磁控溅射法在较低基底温度下(200 ℃)制备了有序碲纳米线阵列, 并利用X射线衍射、扫描电镜和透射电镜对所制备薄膜进行了相、形貌和微观结构分析。结果表明, 所制备的纳米线阵列由单晶碲纳米线组成, 单根碲纳米线具有针状形貌, 并沿[101]晶向生长, 平均直径和长度分别为100 nm和1 μm。氩气压力和基底温度均对碲纳米线阵列的形成具有重要影响, 以平衡碲原子沿[101]晶向和(101)晶面方向的扩散和生长。提出了碲纳米线阵列的生长机制, 包括吸附、结合、成核和生长等过程。

关键词: 碲, 纳米线阵列, 射频磁控溅射

Abstract:

A convenient template-free magnetron sputtering method was employed for fabrication of highly ordered single crystalline tellurium nanowire arrays at moderate substrate temperature (200℃). The phase, morphology and microstructure of the as-prepared films were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and high resolution transmission electron microscope (HRTEM). The results indicate that the produced nanowire arrays are composed of single-crystalline Te nanowires, which grow along the [101] direction with needle like morphology. These nanowires have an average diameter of 100 nm and length up to about 1 μm. Working pressure and substrate temperature are both essential for the formation of Te nanowire arrays, which balance the diffusion and growth of Te along [101] direction and (101) plane. The growth mechanism of such nanostructure is proposed, including an absorbing-combining-nucleation-growth process.

Key words: tellurium, nanowire arrays, radio frequency magnetron sputtering

中图分类号:

TB34

张志伟, 邓元. 磁控溅射法可控制备有序碲纳米线阵列[J]. 无机材料学报, 2015, 30(1): 107-112.

ZHANG Zhi-Wei, DENG Yuan. Large-scale Fabrication of Tellurium Nanowire Arrays by Magnetron Sputtering with Controllable Morphology[J]. Journal of Inorganic Materials, 2015, 30(1): 107-112.

图/表 6

Fig. 1 (a, b) FESEM images of the tellurium nanowire arrays, (c, d) TEM images of a single tellurium nanowire. Inset in (a) shows the cross-sectional view of the nanowire arrays. Inset in (d) shows the HRTEM image on the tip

Fig. 2 XRD patterns of the tellurium nanowire arrays deposited under different Ar pressures and substrate temperatures

Fig. 3 FESEM images of the tellurium nanowire arrays deposited under different Ar pressures. (a, b) 0.5 Pa; (c, d) 1.5 Pa; (e, f) 2.0 Pa. Inset in (e) shows the cross-sectional view of the nanowire arrays

Fig. 4 FESEM images of the tellurium nanowire arrays deposited at (a) 200℃, (b) 250℃ and (c, d) 300℃

Fig. 5 FESEM images of the tellurium nanowire arrays deposited on (a) Si(100) and (b) ITO glass

Fig. 6 Growth mechanism of tellurium nanowire arrays

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