GaN基LED图形衬底的性能研究

doi:10.3724/SP.J.1077.2013.12550

无机材料学报 ›› 2013, Vol. 28 ›› Issue (8): 869-874.DOI: 10.3724/SP.J.1077.2013.12550 CSTR: 32189.14.SP.J.1077.2013.12550

GaN基LED图形衬底的性能研究

李程程¹, 徐智谋¹, 孙堂友¹, 王智浩¹, 王双保¹, 张学明¹, 彭静²

(1. 华中科技大学光学与电子信息学院, 武汉 430074; 2. 武汉科技大学理学院, 武汉430081)

收稿日期:2012-09-11 修回日期:2013-01-25 出版日期:2013-08-20 网络出版日期:2013-07-15
作者简介:李程程(1986-), 男, 硕士研究生. E-mail:lcc1011@163.com
基金资助:
国家自然科学基金(61076042、60607006); 国家重大科学仪器专项(2011YQ16000205); 国家863计划(2011AA03A106); 华中科技大学校基金(HUST:2011TS119)

Research for Patterned Sapphire Substrates of GaN-based LEDs

LI Cheng-Cheng¹, XU Zhi-Mou¹, SUN Tang-You¹, WANG Zhi-Hao¹, WANG Shuang-Bao¹, ZHANG Xue-Ming¹, PENG Jing²

(1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; 2. College of Sciences, Wuhan University of Science and Technology, Wuhan 430081, China)

Received:2012-09-11 Revised:2013-01-25 Published:2013-08-20 Online:2013-07-15
About author:LI Cheng-Cheng. E-mail:lcc1011@163.com
Supported by:
National Natural Science Foundation of China(61076042; 60607006); Special Project on Development of national key scientific instruments and equipment of China(2011YQ16000205); National High Technology Research and Development Program of China (863 Program)(2011AA03A106); Huazhong University of Science and Technology Fund(HUST:2011TS119)

摘要/Abstract

摘要： 蓝宝石图形衬底可以降低外延位错密度并增强背散射光, 已经成为制备高亮LED有效技术手段。本研究运用时域有限差分(FDTD)法模拟和比较了GaN基微纳米图形衬底LED几种衬底图形结构对光的提取效率的影响。模拟结果显示纳米图形衬底(NPSS)对光效的提高明显优于微米图形衬底(MPSS)。在对圆柱、圆孔、圆台、圆锥和曲面锥等纳米结构的研究中, 圆台柱结构的纳米图形衬底对光提取效果最好。通过进一步模拟优化, 得到圆台结构的最佳参数, 此时相对于普通衬底LED光的提取效率提高了96.6%。试验中, 采用软模压印技术在蓝宝石基片上大面积制备出纳米圆台图形衬底, 并测得外延生长GaN层后的外延片的PL强度增加了8倍, 可见纳米图形衬底对提高LED的出光效率有显著效果。

关键词: GaN基LED, FDTD, 图形衬底, 纳米压印

Abstract: Patterned Sapphire Substrate (PSS) which can reduce the density of threading dislocation and enhance the effect of scattering is widely used to fabricate high-power Light-Emitting-Diode (LED) chip. In this paper, the finite- difference time-domain (FDTD) method was used to simulate and analyze the light extraction efficiency (LEE) of GaN-based micro-scale and nano-scale patterned sapphire substrates LED. The results show that the nano-patterned sapphire substrate (NPSS) has a significantly better LEE than that of micro-patterned sapphire substrate (MPSS). And in NPSS, the LEE of the pillar structure improveed 96.6% comparing to other nano-patterned structures. Large areas of table-like nano-sapphire patterned substrates are successfully prepared through soft embossing technology. The photoluminescence (PL) of the LED grown on table-like nano-sapphire patterned substrates is 8 times stronger than that of the LED grown on the unpatterned sapphire wafers.

Key words: GaN-based LED, FDTD, patterned sapphire substrates, nano-imprint

中图分类号:

TB34

李程程, 徐智谋, 孙堂友, 王智浩, 王双保, 张学明, 彭静. GaN基LED图形衬底的性能研究[J]. 无机材料学报, 2013, 28(8): 869-874.

LI Cheng-Cheng, XU Zhi-Mou, SUN Tang-You, WANG Zhi-Hao, WANG Shuang-Bao, ZHANG Xue-Ming, PENG Jing. Research for Patterned Sapphire Substrates of GaN-based LEDs[J]. Journal of Inorganic Materials, 2013, 28(8): 869-874.

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GaN基LED图形衬底的性能研究

Research for Patterned Sapphire Substrates of GaN-based LEDs

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