W-Mo复合离子掺杂VO2薄膜热滞回线的热调制现象

doi:10.3724/SP.J.1077.2013.12358

无机材料学报 ›› 2013, Vol. 28 ›› Issue (5): 497-501.DOI: 10.3724/SP.J.1077.2013.12358 CSTR: 32189.14.SP.J.1077.2013.12358

W-Mo复合离子掺杂VO₂薄膜热滞回线的热调制现象

张阳, 黄婉霞, 施奇武, 宋林伟, 徐元杰

(四川大学材料科学与工程学院, 成都 610064)

收稿日期:2012-05-29 修回日期:2012-09-04 出版日期:2013-05-10 网络出版日期:2013-04-22
作者简介:张阳(1984–), 男, 硕士研究生. E-mail: zhangyang1984@yahoo.cn
基金资助:
国家自然科学基金(61271075) National Natural Science Foundation of China (61271075)

Thermal Modulation Behavior inside the Hysteresis Loop of W-Mo Co-doping Vanadium Dioxide Film

ZHANG Yang, HUANG Wan-Xia, SHI Qi-Wu, SONG Lin-Wei, XU Yuan-Jie

(College of Material Science and Engineering, Sichuan University, Chengdu 610064, China)

Received:2012-05-29 Revised:2012-09-04 Published:2013-05-10 Online:2013-04-22
About author:ZHANG Yang. E-mail: zhangyang1984@yahoo.cn

摘要/Abstract

摘要：

以单晶Si (100)为基底, 采用无机溶胶-凝胶法在其表面制备W-Mo复合离子掺杂VO₂薄膜。采用SEM、XRD等手段分析了薄膜的表面形貌和晶体结构。在热驱动下, 利用原位FTIR分析了W-Mo复合离子掺杂VO₂薄膜半导体-金属相变性能。结果显示: 单晶Si (100)表面VO₂薄膜具有(011)择优生长取向, W⁶⁺、Mo⁶⁺取代了V⁴⁺在晶格中的位置, 实现置换掺杂。热滞回线分析表明, 与未掺杂VO₂薄膜相比, V_1-_x_-_yMo_xW_yO₂薄膜相变温度降低, 滞后温宽减小, 同时相变陡然性变差, 相变温宽增大; 在相变温度区间内, 温度路径对红外透过率具有调制效果, 其调制作用受原始热滞回线的制约。

关键词: 二氧化钒薄膜, 红外光学性能, W-Mo复合掺杂, 热调制

Abstract:

V_1-_x_-_yMo_xW_yO₂ polycrystalline films were deposited on Si (100) substrate by an aqueous Sol-Gel method. XRD, SEM were used to detect the morphology and crystal structure of the films. In situ FTIR was carried out to analyze phase transition properties of the V_1-_x_-_yMo_xW_yO₂ films. The results show that the prepared films are (011) oriented on Si substrate at room temperature, W⁶⁺ and Mo⁶⁺ substitute the position of V⁴⁺in the sublattice. The infrared transmittance hysteresis cycles prove that, with the increasing of the W-Mo co-doping content, the phase transition temperature becomes low, while the temperature width of the hysteresis and the sharpness of the phase transition decrease, but the temperature width of the phase transition duration becomes wide. In the temperature range of the phase transition duration the infrared transmittance is modulated by the temperature path, and the infrared transmittance cycles are confined to the boundary of the infrared transmittance hysteresis cycles.

Key words: vanadium dioxide film, infrared optical properties, W-Mo doping, thermal modulation

中图分类号:

TG135

张阳, 黄婉霞, 施奇武, 宋林伟, 徐元杰. W-Mo复合离子掺杂VO₂薄膜热滞回线的热调制现象[J]. 无机材料学报, 2013, 28(5): 497-501.

ZHANG Yang, HUANG Wan-Xia, SHI Qi-Wu, SONG Lin-Wei, XU Yuan-Jie. Thermal Modulation Behavior inside the Hysteresis Loop of W-Mo Co-doping Vanadium Dioxide Film[J]. Journal of Inorganic Materials, 2013, 28(5): 497-501.

图/表 4

图1 (a) Si基底V1-x-yMoxWyO2薄膜的XRD图谱及(b) d(011)与掺杂浓度的关系

Fig. 1 (a) XRD patterns of V1-x-yMoxWyO2 films on Si substrates and (b) dependence of d(011) on impurity content

图2 V1-x-yMoxWyO2薄膜的SEM图谱

Fig. 2 SEM images of V1-x-yMoxWyO2 films

图3 V1-x-yMoxWyO2薄膜的红外光透过率随温度的变化曲线

Fig. 3 Infrared transmittance of V1-x-yMoxWyO2 films vs temperature. The wavenumber is 401 cm-1. The lines 1, 2, 3 or 4 show reversal curves for different Tr. The insets show the first order derivative of minus transmittance vs temperature

图4 不同温度路径时, V1-x-yMoxWyO2薄膜的红外光透过率随温度的变化

Fig. 4 Infrared transmittance of V1-x-yMoxWyO2 films in the range of the temperature (a) x=y=0 from T1 to T9 and (b) x=y= 1.444at% from T1 to T6

参考文献 22

[1]	Morin F J. Oxides which show a metal-to insulator transition at the neel temperature. Phys. Rev. Lett., 1959, 3(1): 34-36.
[2]	Cavalleri A, Tóth C, Siders C W, et al. Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition. Phys. Rev. Lett. , 2001, 87(23): 207401-1-4.
[3]	Lysenko S, Vikhnin V, Fernandez F, et al. Photoinduced insulator- to-metal transition in VO2 crystalline films and model of dielectric susceptibility. Phys. Rev. B, 2007, 75(7): 075109-1-13.
[4]	Chen Sihai, Ma Hong, Dai Jun, et al. Nanostructured vanadium dioxide thin ﬁlms with low phase transition temperature. Appl. Phys. Lett. , 2007, 90(10): 101117-1-3.
[5]	Manning T D, Parkin I P, Pemble M E, et al. Intelligent window coatings: atmospheric pressure chemical vapor deposition of tungsten- doped vanadium dioxide. Chem. Mater., 2004, 16(4): 744-749.
[6]	Lysenko S, Rua A J, Vikhnin V, et al. Light-induced ultrafast phase transitions in VO2 thin film. Appl. Surf. Sci., 2006, 252(15): 5512-5515.
[7]	Roach W R. Holographic Storage in VO2. Appl. Phys. Lett., 1971, 19(11): 453-455.
[8]	WEI Xiong-Bang,WU Zhi-Ming,WANG Tao, et al. Growth of vanadium oxide thin films on glass substrate. Journal of Inorganic Materials, 2008, 23(2): 364-368.
[9]	Nishikawa Masami, Nakajima Tomohiko, Kumagai Toshiya, et al. Adjustment of thermal hysteresis in epitaxial VO2 films by doping metal ions. J. Ceram. Soc. Jpn, 2011, 119(7): 577-580.
[10]	Ramírez J G, Sharoni A, Dubi Y, et al. First-order reversal curve measurements of the metal-insulator transition in VO2: signatures of persistent metallic domains. Phys. Rev. B, 2009, 79(23): 235110-1-7.
[11]	Lopez R, Boatner L A, Haynes T E, et al. Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation. Appl. Phys. Lett., 2001, 79(19): 3161-3163.
[12]	Shi Jianqiu, Zhou Shuxue, You Bo, et al. Preparation and thermochromic property of tungsten-doped vanadium dioxide particles. Solar Energy Materials & Solar Cells, 2007, 91(19): 1856-1862.
[13]	Du Jing, Gao Yanfeng, Luo Hongjie, et al. Signiﬁcant changes in phase-transition hysteresis for Ti-doped VO2 ﬁlms prepared by polymer-assisted deposition. Solar Energy Materials & Solar Cells, 2011, 95(2): 469-475.
[14]	Burkhardt W, Christmann T, Franke S, et al. Tungsten and fluorine co-doping of VO2 films. Thin Solid Films, 2002, 402(1/2): 226-231.
[15]	Soltani M, Chaker M, Haddad E, et al. Effects of Ti-W codoping on the optical and electrical switching of vanadium dioxide thin ﬁlms grown by a reactive pulsed laser deposition. Appl. Phys. Lett., 2004, 85(11): 1958-1960.
[16]	Yan Jiazhen, Zhang Yue, Huang Wanxia, et al. Effect of Mo-W Co-doping on semiconductor-metal phase transition temperature of vanadium dioxide film. Thin Solid Films, 2008, 516(23): 8554-8558.
[17]	Viswanath B, Ko C, Ramanathan S. Thermoelastic switching with controlled actuation in VO2 thin ﬁlms. Scripta Mater., 2011. 64(6): 490-493.
[18]	Gurvitch M, Luryi S, Polyakov A, et al. Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging. J. Appl. Phys. , 2009, 106(10): 1-1-15.
[19]	Brassard D, Fourmaux S, Jean-Jacques M, et al. Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films. Appl. Phys. Lett. , 2005, 87(5): 051910-1-3.
[20]	Piccirillo C, Binions R, Parkin I P. Synthesis and characterisation of W-doped VO2 by aerosol assisted chemical vapour deposition. Thin Solid Films, 2008, 516(8): 1992-1997.
[21]	Xu Shiqing, Ma Hongping, Dai Shixun, et a1. Study on optical and electrical switching properties and phase transition mechanism of Mo6+ doped vanadium dioxide thin films. Journal of MateriaIs Science, 2004, 39(2): 489-493.
[22]	Lopez R, Haynes T E, Boatner L A, et al. Size effects in the structural phase transition of VO2 nanoparticles. Phys. Rev. B, 65(22): 224113-1-5.

W-Mo复合离子掺杂VO₂薄膜热滞回线的热调制现象

Thermal Modulation Behavior inside the Hysteresis Loop of W-Mo Co-doping Vanadium Dioxide Film

RichHTML

PDF (PC)

可视化

被引次数

摘要/Abstract

引用本文

使用本文

图/表 4

参考文献 22

相关文章 2

编辑推荐

Metrics

本文评价

[1]	肖敏, 孙睿智, 李艳芳, 康同同, 秦俊, 杨润, 毕磊. 基于MoS₂/SiO₂范德华异质结的VO₂薄膜转移打印研究[J]. 无机材料学报, 2019, 34(11): 1161-1166.
[2]	孙洪君, 王敏焕, 边继明, 苗丽华, 章俞之, 骆英民. MBE技术蓝宝石衬底上生长VO₂薄膜及其太赫兹和金属-绝缘体相变特性研究[J]. 无机材料学报, 2017, 32(4): 437-442.