Bi2O3薄膜的制备及其电阻开关特性的研究

doi:10.3724/SP.J.1077.2012.00323

无机材料学报 ›› 2012, Vol. 27 ›› Issue (3): 323-326.DOI: 10.3724/SP.J.1077.2012.00323 CSTR: 32189.14.SP.J.1077.2012.00323

Bi₂O₃薄膜的制备及其电阻开关特性的研究

季振国¹, 王君杰¹, 毛启楠², 席俊华¹

(1. 杭州电子科技大学电子材料与器件工艺实验室, 杭州 310018; 2. 浙江大学硅材料国家重点实验室, 杭州 310027)

收稿日期:2011-04-14 修回日期:2011-06-29 出版日期:2012-03-20 网络出版日期:2012-02-16
基金资助:
国家自然科学基金(61072015); 浙江省自然科学基金(Z4110503)

Deposition of Bi₂O₃ Thin Films and Their Resistive Switching Characteristics

JI Zhen-Guo¹, WANG Jun-Jie¹, MAO Qi-Nan², XI Jun-Hua¹

(1. Laboratory of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, China; 2. State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China)

Received:2011-04-14 Revised:2011-06-29 Published:2012-03-20 Online:2012-02-16
Supported by:
National Natural Science Foundation of China(61072015); Natural Science Foundation of Zhejiang Province (Z4110503)

摘要/Abstract

摘要： 电阻式存储器由于具有众多的优点有望成为最有前景的下一代高速非挥发性存储器的选择之一. 实验利用射频磁控溅射法在重掺硅上沉积了Bi₂O₃薄膜, 并对该薄膜的结晶状态和Au/Bi₂O₃/n⁺Si/Al结构的电阻开关特性进行了研究. XRD分析结果表明, 射频磁控溅射法沉积所得的Bi₂O₃薄膜结晶性能好, (201)取向明显. I-V曲线测试结果表明, Au/Bi₂O₃/n⁺Si/Al结构具有单极性电阻开关特性. 通过对不同厚度Bi₂O₃薄膜的Au/Bi₂O₃/n⁺Si/Al结构I-V特性比较发现, 随着薄膜厚度的增加, 电阻开关的Forming、Set和Reset阈值电压均随之增加. 对于Bi₂O₃薄膜厚度为31.2 nm的Au/Bi₂O₃/n⁺Si/Al结构, 其Forming、Set和Reset阈值电压均低于4 V, 符合存储器低电压工作的要求.

关键词: Bi₂O₃薄膜, 电阻开关特性, 薄膜厚度

Abstract: Resistive random access memory (ReRAM) is one of the most promising candidates for next generation high speed nonvolatile memory devices. Bi₂O₃ thin films were deposited on heavily doped silicon wafer by RF magnetron sputtering, and the crystalline structure of the Bi₂O₃ thin films were characterized by XRD. The resistive switching characteristics of the Au/Bi₂O₃/n⁺Si/Al structure and the dependence of the ReRAM behavior on the thickness of the Bi₂O₃ thin films were studied. XRD analysis shows that the Bi₂O₃ thin films have good crystalline quality with (201) preferential orientation, while I-V curves results indicate that Bi₂O₃ thin films exhibit reversible and steady unipolar resistive switching behaviors. It is further found that the forming voltages, set voltages, and reset voltages depend linearly on the thickness of Bi₂O₃ thin films, and for the device with the thickness of 31.2 nm, these three threshold voltages are all below 4 V, which meet the need of low voltage operation of the memories.

Key words: Bi₂O₃ thin film, resistive switching, thickness dependence

中图分类号:

O472
O484

季振国, 王君杰, 毛启楠, 席俊华. Bi₂O₃薄膜的制备及其电阻开关特性的研究[J]. 无机材料学报, 2012, 27(3): 323-326.

JI Zhen-Guo, WANG Jun-Jie, MAO Qi-Nan, XI Jun-Hua. Deposition of Bi₂O₃ Thin Films and Their Resistive Switching Characteristics[J]. Journal of Inorganic Materials, 2012, 27(3): 323-326.

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Bi₂O₃薄膜的制备及其电阻开关特性的研究

Deposition of Bi₂O₃ Thin Films and Their Resistive Switching Characteristics

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