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无机材料学报

无机材料学报

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硅基LiNbO3薄膜的微结构研究

卢焕明; 叶志镇; 黄靖云; 汪雷; 赵炳辉   

  1. 浙江大学硅材料国家重点实验室, 杭州 310027
  • 收稿日期:2004-05-11 修回日期:2004-11-29 出版日期:2005-07-20 网络出版日期:2005-07-20

Microstructure of LiNbO3 Thin Films Grown on Silicon Substrates by Pulsed Laser Deposition

LU Huan-Ming; YE Zhi-Zhen; HUANG Jing-Yun; WANG Lei; ZHAO Bing-Hui   

  1. State Key Laboratory of Silicon Materials; Zhejiang University; Hangzhou 310027; China
  • Received:2004-05-11 Revised:2004-11-29 Published:2005-07-20 Online:2005-07-20

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摘要： 利用透射电子显微镜及X射线衍射,研究脉冲激光沉积技术(PLD)在Si(001)衬底上生长LiNbO3薄膜的微结构.结果表明,在600℃的衬底温度、30Pa的氧分压条件下,在硅片表面5nm厚的非晶氧化层上生长的薄膜,为c轴择优取向的单相LiNbO3晶体.本文还讨论了获得c轴择优取向LiNbO3薄膜的生长机理.

关键词: LiNbO3薄膜, 透射电子显微镜, PLD技术

Abstract: A lithium niobate (LiNbO3) thin film was fabricated by a pulsed laser deposition method on Si(001) substrate with about 5nm-thick amorphous silicon oxide surface layer, under the conditions of 600℃ substrate temperature and 30 Pa oxygen pressure. The film was investigated by transmission electron microscope and X-ray diffraction. The factors influencing on the evolution and preferred orientation of the LiNbO3 were discussed. The results obtained show that the LiNbO3 thin film is highly c-axis oriented perpendicularly to the substrate under the optimized deposition conditions above mentioned.

Key words: LiNbO3, transmission electron microscopy, pulsed laser deposition

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