HWP-CVD氮化硅薄膜的结构和光学特性

无机材料学报

HWP-CVD氮化硅薄膜的结构和光学特性

于威¹; 侯海虹¹; 何杰¹; 王华英²; 傅广生¹

1. 河北大学物理科学与技术学院，保定 071002; 2。河北建筑科技学院数理部，邯郸 056000

收稿日期:2003-06-30 修回日期:2003-09-11 出版日期:2004-07-20 网络出版日期:2004-07-20

Microstructure and Optical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited by Helicon Wave Plasma Enhanced Chemical Vapor Deposition

YU Wei¹; HOU Hai-Hong¹; HE Jie¹; WANG Hua-Ying²; FU Guang-Sheng¹

1。College of Physics Science and Technology; Hebei University; Baoding 071002; China; 2。Department of Mathematics and Physics; College of Civil Engineering; Handan 056000; China

Received:2003-06-30 Revised:2003-09-11 Published:2004-07-20 Online:2004-07-20

摘要/Abstract

摘要： 采用傅立叶红外吸收谱和紫外-可见透射谱研究了螺旋波等离子体增强化学气相沉积法制备的氢化非晶氮化硅薄膜的原子间键合结构和光学特性。结果表明,在不同硅、氮活性气体配比R下,薄膜表现出不同的Si/N比和H原子键合方式,富氮样品中H原子主要和N原子结合,而富硅样品中主要和Si原子结合。随着R的增加,薄膜的光学带隙E_g和E₀₄逐渐减小,此结果关联于薄膜结构无序性程度的增加,而薄膜的(E₀₄-E_g)和Tauc斜率B值之间存在着相互制约关系。

关键词: 氮化硅薄膜, 光学特性, 螺旋波等离子体增强化学气相沉积

Abstract: The atomic configurations and optical properties of hydrogenated amorphous silicon nitride (a-SiN_x:H)
films deposited by helicon wave plasma enhanced chemical vapor deposition (HWP-CVD) were analyzed by using Fourier transform infrared (FTIR)
spectroscopy and ultraviolet-visible (UV-VIS) spectroscopy. The results reveal that the films show different Si/N ratio and hydrogen bonding mode
at the various ratio between the silicon and nitrogen containing gases (R), For nitride-rich samples, hydrogen has a chemical preference to
bind to nitride. On the other hand, for silicon-rich samples, hydrogen atoms bind preferentially to silicon. The optical band gap, E_g
and E₀₄ of a-SiN_x:H films decrease gradually with the increase of R, which is attributed to the increase of disorder degree of the
a-SiN_x:H film microstructure. Additionally, the correlation between (E₀₄--E_g) and the slop of Tauc plot, B for the a-SiN_x:H
films is established.

Key words: silicon nitride films, optical property, helicon wave plasma enhanced chemical vapor deposition

中图分类号:

O484， TB43

于威,侯海虹,何杰,王华英,傅广生. HWP-CVD氮化硅薄膜的结构和光学特性[J]. 无机材料学报.

YU Wei,HOU Hai-Hong,HE Jie,WANG Hua-Ying,FU Guang-Sheng. Microstructure and Optical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited by Helicon Wave Plasma Enhanced Chemical Vapor Deposition[J]. Journal of Inorganic Materials.

[1]	陈小波, 杨雯, 段良飞, 张力元, 杨培志. 周期性梯度富硅SiN_x薄膜的微结构与发光特性[J]. 无机材料学报, 2014, 29(12): 1270-1274.
[2]	郑金桔, 曹盛, 高凤梅, 尉国栋, 贾龙, 杨为佑. Cu掺杂ZnSe高效量子点的合成及其光学特性研究[J]. 无机材料学报, 2013, 28(2): 159-164.
[3]	黄帅, 李晨辉, 孙宜华, 柯文明. 基底温度对直流溅射Nb掺杂TiO₂薄膜性能的影响[J]. 无机材料学报, 2012, 27(1): 64-68.
[4]	王保柱,王晓亮. 射频分子束外延生长AlInGaN四元合金[J]. 无机材料学报, 2009, 24(3): 559-562.
[5]	刘明,魏玮,曲盛薇,谷建峰,马春雨,张庆瑜. 氧分压对磁控溅射ZnO薄膜生长行为和光学特性的影响[J]. 无机材料学报, 2008, 23(6): 1096-1100.
[6]	于威,杜洁,张丽,崔双魁,路万兵,傅广生. 氢流量对纳米SiC薄膜微结构和光学特性的影响[J]. 无机材料学报, 2008, 23(3): 540-544.
[7]	严成锋,赵广军,张连翰,徐军. 大尺寸 Ce:Lu_1.6Y_0.4SiO₅闪烁晶体的生长和光谱特性[J]. 无机材料学报, 2005, 20(6): 1301-1305.
[8]	刘学建,金承钰,张俊计,黄智勇,黄莉萍. 低压CVD氮化硅薄膜的沉积速率和表面形貌[J]. 无机材料学报, 2004, 19(2): 379-384.