铁电钛酸锶钡薄膜的最新研究进展

无机材料学报

铁电钛酸锶钡薄膜的最新研究进展

朱小红^1,2; 朱建国¹; 郑东宁²; 李林²

1. 四川大学材料科学与工程学院, 成都 610064; 2. 中国科学院物理研究所超导国家重点实验室, 北京 100080

收稿日期:2002-07-29 修回日期:2002-09-19 出版日期:2003-09-20 网络出版日期:2003-09-20

Novellest Research on Ferroelectric Ba_xSr_1-xTiO₃ Thin Films

ZHU Xiao-Hong^1,2; ZHU Jian-Guo¹; ZHENG Dong-Ming²; LI Lin²

1. College of Materials Science and Engineering; Sichuan University; Chengdu 610064; China; 2. National Laboratory for Superconductivity; Institute of Physics; Chinese Academy of Sciences; Beijing 100080; China

Received:2002-07-29 Revised:2002-09-19 Published:2003-09-20 Online:2003-09-20

摘要/Abstract

摘要： 铁电钛酸锶钡(Ba_xSr_1-xTiO₃)是一种拥有十分优越铁电/介电性能的材料,在可调谐微波器件及动态存储器件方面具有很好的应用前景.本文概括介绍了Ba_xSr_1-xTiO₃薄膜的研究意义、基本结构、制备方法、各种性能特征及其表征方法与应用展望;并对当前Ba_xSr_1-xTiO₃薄膜研究中的几个重要前沿问题进行了详细讨论.

关键词: 铁电/介电薄膜, 钛酸锶钡, 微波器件, 动态随机存储器

Abstract: Ferroelectric (Ba,Sr)TiO₃ thin films have excellent ferroelectric/dielectric properties, and promising
application prospect in tunable microwave devices and dynamic random access devices. In this article, their research backgrounds, basic
structures, preparation methods, various characterizations of thin film properties, and applications are summarized. Furthermore, the several
important problems of the current researches of (Ba,Sr)TiO₃ thin films are also discussed in great detail based on the acquired research
results.

Key words: ferroelectric/dielectric thin film, barium strontium titanate （BST-x）, microwave devices, dynamic random access device

中图分类号:

O484

朱小红,朱建国,郑东宁,李林. 铁电钛酸锶钡薄膜的最新研究进展[J]. 无机材料学报.

ZHU Xiao-Hong,ZHU Jian-Guo,ZHENG Dong-Ming,LI Lin. Novellest Research on Ferroelectric Ba_xSr_1-xTiO₃ Thin Films[J]. Journal of Inorganic Materials.

参考文献

[1] Boikov Y A, Claeson T. J. Appl. Phys., 1997, 81 (7): 3232--3236.
[2] Dalberth M J, Stauber R E, Price J C, et al. Appl. Phys. Lett., 1998, 72 (4): 507--509.
[3] Jia Q X, Findikoglu A T, Reagor D, et al. Appl. Phys. Lett., 1998, 73 (7): 897--899.
[4] Horikawa Tsuyoshi, Mikami Noboru, Makita Tetsuro, et al. Jpn. J. Appl. Phys., Part 1, 1993, 32: 4126--4130.
[5] Kingon Angus I, Maria Jon-Paul, Streiffer S K. NATURE, 2000, 406: 1032--1038.
[6] Park Soon Oh, Hwang Cheol Seong, et al. Jpn. J. Appl. Phys., Part 1, 1996, 35: 1548--1552.
[7] Yoon S G, Lee J C, Safari A. Integrated Ferroelectrics, 1995, 7 (1-4): 329---339.
[8] Chen C L, Shen J, Miranda F A, et al. Appl. Phys. Lett., 2001, 78 (5): 652--654.
[9] Lippmaa M, Nakagawa N, Ohashi S, et al. Appl. Phys. Lett., 1999, 74 (23): 3543--3545.
[10] Xi X X, Li H C, Geerk J, et al. Physica C, 1988, 153: 794--798.
[11] Gao Y, Tran T, Alluri P. Appl. Phys. Lett., 1999, 75 (3): 415--417.
[12] Gao Y, He S, Alluri P, et al. J. Appl. phys., 2000, 87 (1): 124--132.
[13] Cheng Jian-Gong, Tang Jun, Meng Xiang-Jian, et al. J. Am. Ceram. Soc., 2001, 84 (7): 1421--1424.
[14] Chen C L, Feng H H, Zhang Z, et al. Appl. Phys. Lett., 1999, 75 (3): 412--414.
[15] Cole M W, Hubbard C, Ngo E, et al. J. Appl. Phys., 2002, 92 (1): 475--483.
[16] Jeon Young-Ah, Choi Eun-Suck, Seo Tae-Suck, et al. Appl. Phys. Lett., 2001, 79 (7): 1012--1014.
[17] Carlson C M, Rivkin T V, Parilla P A, et al. Appl. Phys. Lett., 2000, 76 (14): 1920--1922.
[18] Baumert B A, Chang L H, Matsuda A T, et al. J. Appl. Phys., 1997, 82 (5): 2558--2566.
[19] Kuroiwa T, Tsunemine Y, Horikawa T, et al. Jpn. J. Appl. Phys., Part 1, 1994, 33: 5187--5191.
[20] Park J H, Kim B K, Park J G, et al. Ferroeletrics, 1999, 230 (1-4): 453--458.
[21] Dietz G W, Schumacher M, Waser R, et al. J. Appl. Phys., 1997, 82 (5): 2359--2364.
[22] Chang W, Horwitz J S, Carter A C, et al. Appl. Phys. Lett., 1999, 74 (7): 1033--1035.
[23] Kim Boum-Seock, Oh Se-Hoon, Son Seung-Young, et al. J. Appl. Phys., 2000, 87 (9): 4425--4429.
[24] Sinnamon L J, Bowman R M, Gregg J M. Appl. Phys. Lett., 2001, 78 (12): 1724--1726.
[25] McNeal Mark P, Jang Sei-Joo, Newnham Robert E. J. Appl. Phys., 1998, 83 (6): 3288--3297.
[26] Sirenko A A, Akimov I A, Fox J R, et al. Phys. Rev. Lett., 1999, 82 (22): 4500--4503.
[27] Amanuma K, Mori T, Hase T, et al. Jpn. J. Appl. Phys., Part 1, 1993, 32: 4150--4153.
[28] Lee Byoung Taek, Hwang Cheol Seong. Appl. Phys. Lett., 2000, 77 (1): 124--126.
[29] Vendik O G, Zubko S P, Ter-Martirosayn L T. Appl. Phys. Lett., 1998, 73 (1): 37--39.
[30] Hwang C S, Lee B T, Kang C S, et al. J. Appl. Phys., 1999, 85 (1): 287--295.
[31] Hieda K, Eguchi K, Fukushima N, et al. Proceedings of International Electron Devices Meeting (IEEE, New York, 1998). 807.
[32] Hwang Cheol Seong. J. Appl. Phys., 2002, 92 (1): 432--437.
[33] Joshi P C, Ramanathan S, Desu S B, et al. Integrated Ferroelectrics, 1998, 19: 141--148.
[34] YOON Ki Hyun, LEE Jae Chan, PARK Jihoon, et al. Jpn. J. Appl. Phys., Part 1, 2001, 40: 5497--5500.
[35] JEON Young-Ah, SEO Tae-Suck, YOON Soon-Gil. Jpn. J. Appl. Phys., Part 1, 2001, 40 (11): 6496--6500.
[36] Jia Q X, Park B H, Gibbons B J, et al. Appl. Phys. Lett., 2002, 81 (1): 114--116.
[37] Streiffer S K, Basceri C, Parker C B, et al. J. Appl. Phys., 1999, 86 (8): 4565--4575.
[38] Ban Z G, Alpay S P. J. Appl. Phys., 2002, 91 (11): 9288--9296.
[39] Rivkin T V, Carlson C M, Parilla P A, et al. Integrated Ferroelectrics, 2000, 29: 215--223.