无机材料学报

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铝/氮化铝电子陶瓷基板的制备及性能的研究

彭榕; 周和平; 宁晓山; 林渊博; 徐伟   

  1. 清华大学材料科学与工程系新型陶瓷与精细工艺国家重点实验室 北京 100084
  • 收稿日期:2001-09-20 修回日期:2001-11-09 出版日期:2002-11-20 网络出版日期:2002-11-20

Performance of Al/AlN Substrate

PENG Rong; ZHOU He-Ping; NING Xiao-Shan; LIN Yuan-Bo; Xu Wei   

  1. The State Key Laboratory of New Ceramic and Fine Processing; Department of Materials Science and Engineering; Tsinghua University; Beijing 100084; China
  • Received:2001-09-20 Revised:2001-11-09 Published:2002-11-20 Online:2002-11-20

摘要: 在675~750℃、氮气气氛下,使用石墨模具压铸的方法将金属纯Al敷接在AlN电子陶瓷基板上,随后利用力学拉伸试验机测试了Al和AlN的结合强度,其界面抗拉强度>15.94MPa,然后使用金相显微镜、SEM等微观分析仪器研究其界面的微观结构,发现在Al/AlN界面没有任何新物质生成,金属铝晶粒直接在AlN陶瓷表面结晶长大.

关键词: 敷接, 结合强度, Al/A1N电子陶瓷基板

Abstract: In this work, by die-casting-bonding process, in 948-1098K and N2 atmosphere, Al/AlN substrate was produced
successfully. The bonding strength of Al and AlN substrate tested by mechanic testing equipment was more than 15.56MPa; The micorstructure
of Al/AlN interface was investigated by SEM and microscope. The results show that there is nothing produced in the interface of Al/AlN,
the crystal of aluminium grows on the surface of AlN directly, the bonding temperatures have no influence on Al/AlN interface strength.

Key words: bonding, Al, die-casting-bonding, AlN substrates

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