二硅化钼材料低温氧化的研究进展

无机材料学报

二硅化钼材料低温氧化的研究进展

王刚; 赵世柯; 江莞

中科院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室上海 200050

收稿日期:2000-11-24 修回日期:2001-01-10 出版日期:2001-11-20 网络出版日期:2001-11-20

Progress in the Low Temperature Oxidation of MoSi₂

WANG Gang; ZHAO Shi-Ke; JIANG Wan

State Key Lab of High Performance Ceramics and Superfine Microstructure; Chinese Academy of Sciences; Shanghai 200050; China

Received:2000-11-24 Revised:2001-01-10 Published:2001-11-20 Online:2001-11-20

摘要/Abstract

摘要： 介绍了二硅化钼低温氧化的研究进展，对当今几种二硅化钼材料低温氧化发生“Ｐｅｓｔｉｎｇ”现象的机理模型及改善低温抗氧化的方法进行了评述，在此基础上提出了今后的二硅化钼低温氧化研究的重点和方向．

关键词: 二硅化钼, 低温氧化, Pesting

Abstract: The low temperature oxidation of MoSi₂ was reviewed. The simultaneous oxidation of Mo and Si occurs at low temperature (<1000℃) with the
formation of MoO₃ and SiO₂, and this nonselective oxidation often leads to structural disintegration of MoSi₂ (Pesting). Several models of the pesting
reaction were summarized as follows:(1) Grain boundary hardening mechanism; (2) Pore-and-crack oxidation mechanism; (3) Grain boundary diffusion and oxidation
mechanism. On these bases, some methods that prevent the occurrence of Pesting were proposed and elucidated, and some proposals for the low temperature
oxidation research of MoSi₂ were suggested.

Key words: molybdenum disilicide, low temperature oxidation, Pesting

中图分类号:

TQ174

王刚,赵世柯,江莞. 二硅化钼材料低温氧化的研究进展[J]. 无机材料学报.

WANG Gang,ZHAO Shi-Ke,JIANG Wan. Progress in the Low Temperature Oxidation of MoSi₂[J]. Journal of Inorganic Materials.

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