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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

离子注入对纳米Si3N4结构的影响

涂鲜花1,2; 李道火1; 赵华珍1; 詹明生2   

  1. 1. 中国科学院安徽光学精密机械研究所, 合肥 230031; 2. 中国科学院武汉物理与数学研究所波谱与原子分子物, 武汉 430071
  • 收稿日期:2000-03-20 修回日期:2000-06-15 出版日期:2001-03-20 网络出版日期:2001-03-20

Effects of Ion Implantation on the Structure of Nano-Si3N4

TU Xian-Hua1,2; LI Dao-Huo1; ZHAO Hua-Zhen1; ZHAN Ming-Sheng2   

  1. 1. Anhui Institute of Optics and Fine Mechanics; Chinese Academy of Sciences; Hefei 230031; China; 2. State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics; Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan 430071, China
  • Received:2000-03-20 Revised:2000-06-15 Published:2001-03-20 Online:2001-03-20

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摘要： 通过ＦＴ－ＩＲ、ＸＰＳ和荧光光谱研究了离子注入对纳米Ｓｉ３Ｎ４结构的影响．发现离子注入改变了材料中游离硅（ａ－Ｓｉ）的结构，使其变成了ＳｉＮｎ（ｎ＝１，２）．荧光谱研究表明纳米Ｓｉ３Ｎ４具有明显的量子限制效应，并且荧光峰的位置和强度存在不稳定性．根据实验结果给出了纳米Ｓｉ３Ｎ４的能级结构图.

关键词: 量子限制效应, 荧光不稳定, 离子注入, 纳米Si3N4

Abstract: The effects of ion implantation on the structure of nano-Si3N4 was studied by means of FT-IR, XPS and photoluminescence spectra. The energy level scheme and the energy structure of nano-Si3N4 were given. The results show that ion implantation makes free Si in the material change to SiNn(n=l, 2), and nano-Si3N4 possesses a quantum confinement effect, and its photoluminescence peak position and intensity are unstable.

Key words: quantum confinement, unstablity of photoluminescence, ion implantation, nano-Si3N4

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