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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

Y2O3-SnO2常温气敏薄膜的Sol-Gel制备及性能研究

方国家1,2,3; 刘祖黎1; 吉向东3; 王汉忠3; 黄宜军3; 姚凯伦1,2   

  1. 1。 华中科技大学激光技术国家重点实验室， 武汉 430074; 2。 华中科技大学物理系， 武汉 430074； 3。襄樊学院物理系信息功能材料研究室 襄樊 441053
  • 收稿日期:2000-02-16 修回日期:2000-03-29 出版日期:2001-01-20 网络出版日期:2001-01-20

Preparation and Characterization of Room Temperature NO2 Sensitive Y2O3-SnO2 Sol-Gel Thin Films

FANG Guo-Jia1,2,3; LIU Zu-Li1; JI Xiang-Dong1; WANG Han-Zhong3; HUANG Yi-Jun3; YAO Kai-Lun 1,2   

  1. 1. National Lab of Laser Technology; Huazhong Unlv. of Science & Technology; Wuhan 430074; China; 2. Department of Physics; Huazhong Univ. of Science & Technology, Wuhan 430074, China; 3. Information and Functional Materials Research Group, Xiaofan University, Xiangfan 441053, China
  • Received:2000-02-16 Revised:2000-03-29 Published:2001-01-20 Online:2001-01-20

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摘要： 以无机盐ＳｎＣｌ２·２Ｈ２Ｏ，Ｙ（ＮＯ３）３·６Ｈ２Ｏ为原料，无水乙醇为溶剂，采用溶胶－凝胶工艺制备了Ｙ２Ｏ３掺杂的ＳｎＯ２薄膜．采用差热－失重分析研究了Ｙ２Ｏ３掺杂的ＳｎＯ２干凝胶粉末的热分解、晶化过程．研究了Ｙ２Ｏ３－ＳｎＯ２薄膜的电学和气敏性能．从实验中得到了Ｙ２Ｏ３掺杂份量对ＳｎＯ２薄膜电学及气敏性能的影响．实验表明Ｙ２Ｏ３掺杂的ＳｎＯ２薄膜在常温下对ＮＯｘ具有较好的灵敏度和选择性，并具有较好的响应恢复性能；在常温下对Ｈ２Ｓ气体也具有一定的灵敏度．

关键词: sol-gel工艺, Y2O3-SnO2薄膜, 气敏及电学性能

Abstract: Pure and Y2O3 doped SnO2 gas sensitive thin films were prepared by the sol-gel technique by using non-alkoxide SnCl2·2H2O ) Y(NO3)3·6H2O as precursors. The thermal decomposition and crystallization process of 1mol%Y2O3-SnO2 thin films and the effect of doping amount on the electrical and gas sensitive properties of SnO2 thin films were studied. The Y2O3-SnO2 film shows novel gas sensing properties (good sensitivity, high selectivity and quick response behavior) toward low concentration of NO2 at room temperature.

Key words: Y2O3 doped SnO2 thin films, electrical and gas sensitive properties, sol-gel technique

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