VSe2薄膜的光电性质及背接触特性的研究

doi:10.3724/SP.J.1077.2013.12256

无机材料学报 ›› 2013, Vol. 28 ›› Issue (3): 312-316.DOI: 10.3724/SP.J.1077.2013.12256 CSTR: 32189.14.SP.J.1077.2013.12256

VSe₂薄膜的光电性质及背接触特性的研究

杨镓溢, 高静静, 王文武, 曾广根, 李卫, 冯良桓, 张静全, 武丽丽, 黎兵

(四川大学材料科学与工程学院, 成都610064)

收稿日期:2012-04-21 修回日期:2012-07-09 出版日期:2013-03-20 网络出版日期:2013-02-20
作者简介:杨镓溢(1986–), 男, 硕士研究生.
基金资助:
国家重点基础研究发展计划 (2011CBA007008); 国家自然科学基金(61076058)

Optoelectrical Properties and Back Contact Characteristic of VSe₂ Thin Films

YANG Jia-Yi, GAO Jing-Jing, WANG Wen-Wu, ZENG Guang-Gen, LI Wei, FENG Liang-Huan, ZHANG Jing-Quan, WU Li-Li, LI Bing

(College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China)

Received:2012-04-21 Revised:2012-07-09 Published:2013-03-20 Online:2013-02-20
About author:YANG Jia-Yi.
Supported by:
Key Project of Chinese National Programs for Fundamental Research and Development (2011CBA007008); National Natural Science Foundation of China (61076058)

摘要/Abstract

摘要： 采用电子束蒸发法制备VSe₂薄膜并进行退火处理, 通过XRD、SEM、透过谱、Hall效应、电导率–温度关系等表征了薄膜的结构、形貌、光学和电学性质, 用半导体特性测试仪研究了VSe₂薄膜的背接触特性。结果表明: VSe₂薄膜在一定的退火温度下结晶并呈稳定的六方相, VSe₂薄膜为p型直接禁带跃迁材料, 光能隙约2.35 eV。将VSe₂作为背接触层应用于CdTe多晶薄膜太阳电池, 消除了roll-over现象, 有效提高了器件性能。

关键词: 背接触, VSe₂薄膜, CdTe薄膜太阳电池

Abstract: VSe₂ thin films were prepared by using electron beam evaporation method and subsequently annealed at different temperatures. The structural, morphological. optical and electrical properties of VSe₂ thin films were characterized by XRD, SEM, optical transmission spectra, Hall coefficients and in situ conductivity measurements. And the back contact characteristic of CdTe solar cells with VSe₂ was investigated by dark J-V measurements. The results show that the films are crystallized in a stable hexagonal phase after annealing. The direct optical band gap value Eg for the films, showing p-type conduction mechanism, is found to be about 2.35 eV. The roll-over phenomenon in CdTe solar cells is eliminated and the device performance effectively improves when VSe₂ is used as a back contact.

Key words: back contact, VSe₂ thin films, CdTe thin film solar cells

中图分类号:

TM910

杨镓溢, 高静静, 王文武, 曾广根, 李卫, 冯良桓, 张静全, 武丽丽, 黎兵. VSe₂薄膜的光电性质及背接触特性的研究[J]. 无机材料学报, 2013, 28(3): 312-316.

YANG Jia-Yi, GAO Jing-Jing, WANG Wen-Wu, ZENG Guang-Gen, LI Wei, FENG Liang-Huan, ZHANG Jing-Quan, WU Li-Li, LI Bing. Optoelectrical Properties and Back Contact Characteristic of VSe₂ Thin Films[J]. Journal of Inorganic Materials, 2013, 28(3): 312-316.

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VSe₂薄膜的光电性质及背接触特性的研究

Optoelectrical Properties and Back Contact Characteristic of VSe₂ Thin Films

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