一种基于锡锑氧化物的透明PN结及整流特性

doi:10.3724/SP.J.1077.2009.09217

摘要/Abstract

摘要： 利用反应磁控溅射法制备了半导体锡锑氧化物薄膜 (TAO). 根据霍尔效应测试结果，当Sn/Sb 原子比处于0.22~0.33范围内时，TAO薄膜是p型导电的，在此范围之外，TAO薄膜是n型导电的. 光学带隙测量结果表明,不同Sn/Sb比的TAO薄膜的禁带宽度基本相同(~3.9eV).构造了一个全透明的PN结，其中n区为Sn/Sb原子比为0.5的TAO薄膜， p区为Sn/Sb原子比为0.33的TAO薄膜.n区TAO的电极用铟锡氧化物（ITO），p区TAO的电极用Cu薄膜.实验结果表明，由于两种导电类型的TAO薄膜具有相同的禁带宽度，上述透明PN结构具有典型的准同质PN结的整流特性.

关键词: 透明半导体薄膜, 锡锑氧化物, PN结

Abstract: Transparent and semiconductive tin-antimony oxide (TAO) films were fabricated by reactive DC magnetron sputtering. According to the results of Hall effect measurement, TAO films are p-type for Sn/Sb atomic ratio in the range of 0.22-0.33, while TAO films with Sn/Sb atomic ratio out of this range are n-type. Optical band-gap measurement results show that the bandgap of all TAO films with various Sn/Sb ratios is almost identical (~3.91eV). Finally, a PN junction based on n-TAO and p-TAO was fabricated using ITO as the electrode for n-TAO and a thin layer of Cu as the electrode for p-TCO. It shows typical rectifying characteristics of a homo-junction diode since both types of TAO films have almost the same band-gap values.

Key words: transparent semiconductive films, antimony-tin oxide, PN junction

中图分类号:

季振国,周荣福,毛启楠,霍丽娟,曹虹. 一种基于锡锑氧化物的透明PN结及整流特性[J]. 无机材料学报, DOI: 10.3724/SP.J.1077.2009.09217.

JI Zhen-Guo,ZHOU Rong-Fu,MAO Qi-Nan,HUO Li-Juan,CAO Hong. A Transparent PN Junction Based on Tin-antimony Oxide Films[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2009.09217.

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