无机材料学报

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测试电容设计对溶胶-凝胶法制备PZT薄膜压电响应的影响

黄硕, 刘丽莎, 周智强, 唐明猛, 钟康宇, 乙姣姣, 汪尧进   

  1. 南京理工大学 材料科学与工程学院,南京 210094
  • 收稿日期:2026-04-11 修回日期:2026-05-04
  • 通讯作者: 刘丽莎, 教授. E-mail: lishaliu@njust.edu.; 汪尧进, 教授. E-mail: yjwang@njust.edu.cn
  • 作者简介:黄 硕(2001-), 男, 硕士研究生. E-mail: huangshuo121@163.com

Effect of Test Capacitor Design on the Piezoelectric Response of Sol-Gel-derived PZT Thin Films

HUANG Shuo, LIU Lisha, ZHOU Zhiqiang, TANG Mingmeng, ZHONG Kangyu, YI Jiaojiao, WANG Yaojin   

  1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
  • Received:2026-04-11 Revised:2026-05-04
  • Contact: LIU Lisha, professor. E-mail: lishaliu@njust.edu.cn; WANG Yaojin, professor. E-mail: yjwang@njust.edu.cn
  • About author:HUANG Shuo (2001-), male, Master candidate. E-mail: huangshuo121@163.com
  • Supported by:
    National Key Research and Development Program of China (2024YFE0109300); National Natural Science Foundation of China (52102133)

摘要: 铁电薄膜(如经典的锆钛酸铅盐Pb(Zr, Ti)O3, PZT)相关成分因其具有高的介电、铁电和压电性能,已成为高性能制动器和换能器的主要成分。但是PZT薄膜的压电性能会因内在材料特性和评估条件的不同而有显著差异。关键影响因素包括薄膜厚度,以及最近理论研究中认识到的测量时使用的电极尺寸。在本工作中,我们通过溶胶-凝胶工艺在Si/Pt基底上,利用混合PbO-TiO2缓冲层制备了PZT薄膜,系统研究了这些参数的综合影响。通过在缓冲层上生长不同厚度的PZT薄膜,分析缓冲层对于薄膜取向的调控作用,以及不同晶粒尺寸对薄膜性能的影响。实验结果表明,在更宽的频率范围内,薄膜厚度的增加可使介电常数提高25%,这导致逆压电系数(d33,c)相应增加。更重要的是,我们通过在不同衬底尺寸的薄膜上溅射不同大小的电极,验证了PZT薄膜的d33,c随电极直径的增大而增大,且这一结果不受衬底尺寸与薄膜厚度的影响,与之前的模拟结果一致。值得注意的是,使用直径为1000 µm的垫状电极测得的d33,c值与直接压电系数(d33,d)相当。鉴于当前研究中广泛使用不同尺寸的电极,这一发现可能为未来d33,c的评估提供有用的参考。

关键词: 逆压电性能, 电极直径, 织构程度, 锆钛酸铅薄膜

Abstract: Ferroelectric thin films, such as the classic lead zirconate titanate (Pb(Zr, Ti)O3, PZT), are key constituents in high-performance actuators and transducers due to their excellent dielectric, ferroelectric, and piezoelectric properties. However, the piezoelectric performance of PZT thin films can vary significantly depending on their intrinsic material characteristics and evaluation conditions. Key influencing factors include film thickness and, as recent theoretical studies have highlighted, the size of the electrodes used during measurement. In this work, PZT thin films were fabricated on Si/Pt substrates via a Sol-Gel process using a hybrid PbO-TiO2 buffer layer, enabling a systematic investigation of the combined effects of these parameters. By depositing PZT films of different thicknesses on the buffer layer, the role of the buffer in controlling film orientation and the influence of different grain sizes on film performance were analyzed. Experimental results demonstrate that increasing film thickness enhances the dielectric constant by up to 25% over a wide frequency range, leading to a corresponding improvement in the converse piezoelectric coefficient (d33, c). More importantly, by sputtering electrodes of varying sizes on films with different substrate dimensions, it was verified that d33, c increases with electrode diameter, and this trend is independent of both substrate size and film thickness, in agreement with previous simulation results. Notably, the d33, c value measured using pad electrodes with a diameter of 1000 µ
m is comparable to the direct piezoelectric coefficient (d33, d). Given the widespread use of electrodes of different dimensions in current research, this finding may provide a useful reference for the future evaluation of d33, c.

Key words: converse piezoelectric performance, electrode diameter, degree of texture, PZT thin films

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