无机材料学报

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掺钇氟化钡闪烁晶体的伽马射线辐照损伤研究

许家炜1,2, 李翔1, 张晶1,2, 谢坚生1, 邓明雪1,2, 齐雪君1, 陈俊锋1,2   

  1. 1.中国科学院 上海硅酸盐研究所,功能晶体与器件全国重点实验室,上海 2001899;
    2.中国科学院大学 材料科学与光电工程中心, 北京 100049
  • 收稿日期:2026-02-24 修回日期:2026-04-21
  • 作者简介:许家炜(2001-), 男, 硕士研究生. E-mail: xujiawei22@mails.ucas.ac.cn
  • 基金资助:
    中国科学院战略性先导科技专项(XDA20230600); 国家重点研发计划(2022YFB3503902); 国家自然科学基金(U2541244)

Gamma-ray Induced Radiation Damage in BaF2:Y Scintillation Crystals

XU Jiawei1,2, LI Xiang1, ZHANG Jing1,2, Xie JianSheng1, Deng Mingxue1,2, QI Xuejun1, CHEN Junfeng1,2   

  1. 1. State Key Laboratory of Functional Crystals and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China;
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2026-02-24 Revised:2026-04-21
  • About author:XU Jiawei (2001-), male, Master candidate. E-mail: xujiawei22@mails.ucas.ac.cn
  • Supported by:
    The Chinese Academy of Sciences (XDA25030600); National Key Research and Development Program of China (2022YFB3503902); National Natural Science Foundation of China (U2541244)

摘要: 掺钇氟化钡(BaF2:Y)晶体是一种亚纳秒级超快闪烁体,具有慢成分被有效抑制、可生长大尺寸高质量单晶等优势,在超快辐射探测领域展现出良好应用前景。然而,其辐照损伤机制与钇掺杂的关联性尚不明确。本研究对0~20% Y掺量(原子分数)的系列BaF2:Y晶体样品,系统开展了10 krad~10 Mrad剂量范围内的伽马射线辐照实验。结果表明,晶体的辐照诱导吸收及相对光输出损失呈现显著Y掺量依赖性。在1.0%~7.5%(原子分数)范围内,Y掺杂晶体的发射加权辐照诱导吸收系数(Emission-weighted radiation-induced absorption coefficient, EWRIAC)与相对光输出损失均低于未掺杂晶体,且在2.0%(原子分数)时达到最优:快、慢成分的EWRIAC分别为4.6 m-1和4.0 m-1(@10 Mrad),相对光输出损失约29%@10 Mrad;而在10.0%~20.0%(原子分数)区间,Y掺杂晶体的EWRIAC和光输出损失均高于未掺杂晶体。磷光光谱中的发射峰表现出不同行为:宽带峰在所有样品中出现,随掺杂量增加而红移;Y掺杂晶体中具有多个明显的窄带峰,强度占比随Y掺量增加而提升。本研究揭示了钇掺杂对BaF2:Y晶体辐照损伤特性的影响规律,为BaF2:Y晶体抗辐照性能提升与实际应用中优化掺量设计提供了关键实验依据。

关键词: 氟化钡, 钇掺杂, 超快闪烁体, 辐照损伤, 辐照诱导吸收, 辐照诱导磷光

Abstract: Yttrium-doped barium fluoride (BaF2:Y) is a sub-nanosecond ultrafast scintillator characterized by effective suppression of its slow luminescence component and the ability to grow large, high-optical-quality single crystals, rendering it highly suitable for ultrafast radiation detection applications. Nevertheless, the underlying mechanisms of radiation damage and their dependence on yttrium doping remain poorly understood. We systematically irradiated a series of BaF2:Y crystals with 0-20.0% Y (in atomic) doping level using γ-rays across a dose range of 10 krad to 10 Mrad. The results indicate that radiation-induced absorption and relative light output loss of crystals exhibit pronounced doping-concentration dependence. Within the 1.0%-7.5% (in atomic) range, both the emission-weighted radiation-induced absorption coefficient (EWRIAC) and relative light output loss of Y-doped crystal are lower than those of the undoped crystal, with optimal performance at 2.0% (in atomic): the EWRIAC values for the fast and slow components are 4.6 m-1 and 4.0 m-1, respectively, at 10 Mrad, corresponding to a relative light output loss of ~29%. In contrast, both EWRIAC and relative light output loss of Y-doped crystals exceed those of the undoped crystal at doping levels of 10.0%-20.0%. The emission peaks in the phosphorescence spectra exhibit distinct features: a broadband emission appears in all samples and shows a redshift with increasing Y doping level, while multiple distinct narrowband peaks are observed in Y-doped crystals with their intensity proportion increasing as the Y doping level rises. This study elucidates the influence of Y doping on the radiation damage characteristics of BaF2:Y crystals, providing key experimental evidence for enhancing the radiation resistance of BaF2:Y crystals and optimizing doping level design in practical applications.

Key words: barium fluoride, yttrium doping, ultrafast scintillator, radiation damage, radiation-induced absorption, radiation-induced phosphorescence

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