无机材料学报 ›› 2019, Vol. 34 ›› Issue (5): 515-520.DOI: 10.15541/jim20180302

所属专题: 光伏材料

• 研究论文 • 上一篇    下一篇

锑掺杂氧化锡薄膜的制备及其对硅基太阳能电池工作温度的影响

李策1,陈爽2,高蕊谦伶2,李然2,侯成义2,王宏志2,谢华清3,张青红2()   

  1. 1. 东华大学 机械工程学院, 上海 201620
    2. 东华大学 材料科学与工程学院, 纤维材料改性国家重点实验室, 上海 201620
    3. 上海第二工业大学 环境与材料工程学院, 上海 201209
  • 收稿日期:2018-07-02 修回日期:2018-12-19 出版日期:2019-05-20 网络出版日期:2019-05-14
  • 作者简介:李 策(1990-), 男, 实验师. E-mail:ce_li@dhu.edu.cn
  • 基金资助:
    中央高校基本科研业务费专项资金自由探索项目(18D110308);上海市自然科学基金(15ZR1401200);上海市优秀学术带头人(16XD1400100);国家自然科学基金(51590902)

Sb-doped Tin Oxide Thin Film: Preparation and Effect on Cooling Silicon Solar Cells

Ce LI1,Shuang CHEN2,Rui-Qian-Ling GAO2,Ran LI2,Cheng-Yi HOU2,Hong-Zhi WANG2,Hua-Qing XIE3,Qing-Hong ZHANG2()   

  1. 1. College of Mechanical Engineering, Donghua University, Shanghai 201620, China
    2. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
    3. College of Environmental and Materials Engineering, Shanghai Polytechnic University, Shanghai 201209, China
  • Received:2018-07-02 Revised:2018-12-19 Published:2019-05-20 Online:2019-05-14
  • Supported by:
    Fundamental Research Funds for the Central Universities(18D110308);Shanghai Natural Science Foundation(15ZR1401200);STC of Shanghai(16XD1400100);National Natural Science Foundation of China(51590902)

摘要:

硅基太阳能电池占据着光伏发电的最大份额, 但是在阳光下其工作温度过高会降低电池效率和功率输出, 因此降低硅基太阳能电池在阳光下的工作温度具有重要意义。本研究以氯化亚锡和三氯化锑为原料, 通过简单的溶胶-凝胶法制备锑掺杂氧化锡(ATO)薄膜, 将其作为硅电池盖板, 研究了锑(Sb)掺杂量和薄膜厚度对薄膜红外阻隔性能和硅电池降温性能的影响。研究表明, ATO薄膜的红外遮蔽性能随薄膜厚度增加而提高, 但可见光透过率随之降低。用AM1.5太阳光持续照射30 min后, 使用旋涂1~4层ATO薄膜盖板的硅电池温度比使用普通玻璃盖板的电池最大降低2.7 ℃, 晶硅电池效率可以保持在10.79%以上。此外, 使用10mol%锑掺杂的3层ATO薄膜盖板的硅电池在连续光照30 min后, 温度比使用普通玻璃盖板最大降低1.5 ℃, 效率提高了0.43%。

关键词: 锑掺杂氧化锡, 红外阻隔薄膜, 降温, 硅基太阳能电池

Abstract:

Silicon-based solar cells occupy the largest share of photovoltaic industry, but their efficiency decreases due to the high operating temperatures under sunlight, which reduces their power output. Thus, cooling the silicon based solar cells under irradiation is very important. In this study, Sb-doped tin oxide ATO thin films, working as the cover plate of silicon-based solar cells, were deposited on glass substrates by Sol-Gel spin-coating method, with SnCl2·H2O and SbCl3 as raw materials. Influence of Sb doping and film thickness on the heat shielding property and the performance of solar cells were investigated. As a result, the shielding performance of the ATO films was improved with the increase of the thickness, while its transmittance reduces with the increase of the thickness. Compared with ordinary glass cells, temperature of solar cells with spin-coated ATO thin films of 1 to 4 layers decreases by 2.7 ℃, and their efficiency keeps over 10.79% after being irradiated by AM1.5 solar simulator for 30 min. What’s more, the ATO doped with 10mol% Sb performs the best thermal insulation. Efficiency of silicon solar cell covered with 10mol% Sb-doped ATO film increases by 0.43% as compared with blank after being irradiated by solar simulator for 30 min.

Key words: Sb-doped tin oxide, infrared shielding films, cooling, silicon solar cell

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