(Bi0.85Sb0.15)1-xAsx的电输运和红外光学特性研究

doi:10.15541/jim20170486

无机材料学报 ›› 2018, Vol. 33 ›› Issue (7): 761-766.DOI: 10.15541/jim20170486 CSTR: 32189.14.10.15541/jim20170486

(Bi_0.85Sb_0.15)_1-_xAs_x的电输运和红外光学特性研究

蔡丽君¹, 史烜岱¹, 吴济穷¹, 朱圣云¹, 黄耀¹, 侯延辉^1,2, 马永昌^1,3

1. 天津理工大学材料科学与工程学院, 天津300384;
2. 天津市光电显示材料与器件重点实验室, 天津 300384;
3. 显示材料与光电器件省部共建教育部重点实验室, 天津 300384

收稿日期:2017-10-17 修回日期:2018-01-02 出版日期:2018-07-10 网络出版日期:2018-06-19
作者简介:蔡丽君(1992-), 男, 学士. E-mail: 18722155015@163.com
基金资助:
国家自然科学基金(10704054);天津理工大学国家级大学生创新创业训练计划(201610060030);National Natural Science Foundation of China (10704054);State Training Program of Innovation and Entrepreneurship of Tianjin University of Technology (201610060030)

Electric Transport and Infrared Property of (Bi_0.85Sb_0.15)_1-_xAs_x

CAI Li-Jun¹, SHI Xuan-Dai¹, WU Ji-Qiong¹, ZHU Sheng-Yun¹, HUANG Yao¹, HOU Yan-Hui^1,2, MA Yong-Chang^1,3

1. School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China;
2. Tianjin Key Lab for Photoelectric Materials and Devices, Tianjin 300384, China;
3. Key Laboratory of Display Materials and Photoelectric Devices (Tianjin University of Technology), Ministry of Education, Tianjin 300384, China

Received:2017-10-17 Revised:2018-01-02 Published:2018-07-10 Online:2018-06-19
About author:CAI Li-Jun. E-mail: 18722155015@163.com

摘要/Abstract

摘要：

采用熔融法制备了(Bi_0.85Sb_0.15)_1-_xAs_x合金, 用X射线衍射和电子能谱仪进行物相和组份表征, 随As掺杂量的增加, 晶胞体积收缩,名义掺杂浓度低于8%的样品没有出现杂相。在温度T =100 K以下, 母体Bi_0.85Sb_0.15的直流电阻温度关系呈现半导体特性, 而(Bi_0.85Sb_0.15)_0.95As_0.05在12~300 K范围都显示金属性。从红外反射光谱可知, Bi_0.85Sb_0.15的等离子边在远红外区且随温度下降向低频移动, 是窄带隙半导体的热激发行为。室温下(Bi_0.85Sb_0.15)_0.95As_0.05的自由电子等离子频率相比母体移动并不明显, 但是散射率增大, 在中红外600~2000 cm^-1区间光电导谱比Bi_0.85Sb_0.15高, 经分析可知是源于带尾态的出现。综合对电输运和红外光谱的分析可知, (Bi_0.85Sb_0.15)_0.95As_0.05的费米能级应处于扩展态区, 而并非定域态。

关键词: 红外光谱, Bi-Sb合金, As掺杂

Abstract:

(Bi₈₅Sb₁₅)_100-_xAs_x alloys were grown by melting stoichiometric mixture of elements Bi, Sb, and As. The phases and components of samples were analyzed by X-ray diffraction and the energy dispersion analysis. The As-doped (less than 8% in nominal) alloys have no impurity phases. Below T =100 K, Bi_0.85Sb_0.15 reveals semiconductor behavior in temperature dependent dc-resistivity, whereas (Bi_0.85Sb_0.15)_0.95As_0.05shows a metallic characteristic in the measured temperature range. The plasma of Bi_0.85Sb_0.15 shift towards low energy in far infrared reflectance spectra with the decrease of temperature, indicating thermally excited response of free electrons. Comparing with undoped Bi_0.85Sb_0.15, the plasma frequency of 5% As doped compound changes slightly, whereas the scattering rate of the free carriers increases. The infrared conductivity spectrum is enhanced in the range 600 cm^-1-2000 cm^-1, due to the formation of tails of the energy bands. Combining with the dc electric transport and the analysis of infrared properties, the Fermi level of (Bi_0.85Sb_0.15)_0.95As_0.05 possibly is not situated in the localized states, but in delocalized range.

Key words: infrared spectra, Bi-Sb alloys, As doping

中图分类号:

O469
O43

蔡丽君, 史烜岱, 吴济穷, 朱圣云, 黄耀, 侯延辉, 马永昌. (Bi_0.85Sb_0.15)_1-_xAs_x的电输运和红外光学特性研究[J]. 无机材料学报, 2018, 33(7): 761-766.

CAI Li-Jun, SHI Xuan-Dai, WU Ji-Qiong, ZHU Sheng-Yun, HUANG Yao, HOU Yan-Hui, MA Yong-Chang. Electric Transport and Infrared Property of (Bi_0.85Sb_0.15)_1-_xAs_x[J]. Journal of Inorganic Materials, 2018, 33(7): 761-766.

图/表 7

图1 (Bi0.85Sb0.15)1.0-xAsx合金的XRD图谱

Fig. 1 XRD patterns of (Bi0.85Sb0.15)1.0-xAsx alloys

表1 样品中As元素含量和晶格尺寸

Table 1 Content of As in samples and lattice sizes

Nominal content As/%	Measured content As/%	Crystal lattice a/nm	Crystal lattice c/nm
0	0	0.4552	1.1913
5	2.5	0.4528	1.1842
8	3.8	0.4487	1.1811

图2 Sb元素(a)、Bi元素(b)和As元素(c)在(Bi0.85Sb0.15)0.95As0.05合金中实空间(20 μm×20 μm)的分布图; 未掺杂Bi0.85Sb0.15样品(d)和(Bi0.85Sb0.15)0.95As0.05样品(e)解理后的微观形貌, 其中的矩形图框为能谱扫描范围

Fig. 2 Elements mapping of Sb(a), Bi(b) and As(c) in a range of 20 μm×20 μm in (Bi0.85Sb0.15)0.95As0.05, microphologies of the cleaved surface of undoped Bi0.85Sb0.15 (d) and (Bi0.85Sb0.15)0.95As0.05 sample (e) The rectangles present the scanning area for (Bi0.85Sb0.15)0.95As0.05 and undoped Bi0.85Sb0.15, respectively

图3 不同掺杂浓度(Bi0.85Sb0.15)1.0-xAsx(x=0, 5%, 8%)电阻率-温度曲线

Fig. 3 Temperature dependent resistivity of (Bi0.85Sb0.15)1.0-xAsx (x=0, 5%, 8%) Inset shows the temperature dependence of Hall coefficient

图4 Bi0.85Sb0.15的变温红外反射率谱

Fig. 4 Infrared reflectivity of Bi0.85Sb0.15 at various temperatures The arrows represent positions of the plasma edges

图5 掺杂5%As的样品与未掺杂As样品在300 K下的红外反射率

Fig. 5 Infrared reflectivity of the undoped Bi0.85Sb0.15 and (Bi0.85Sb0.15)0.95As0.05 at 300 K

图6 掺杂5% As与未掺As样品在300 K下的红外光电导谱

Fig. 6 Infrared conductivity spectra of the undoped Bi0.85Sb0.15 and (Bi0.85Sb0.15)0.95As0.05 at 300 KInset is the proposed diagram of energy bands structure (density of states, DOS) under ground state near the Fermi level

参考文献 25

[1]	SNYDER G J, TOBERER E S.Complex thermoelectric materials.Nature Materials, 2008, 7(2): 105-114.
[2]	BENIA H, STRABER C, KERN K, et al. Surface band structure of Bi1-xSbx Surface band structure of Bi1-xSbx(111). Phys. Rev.B, 2015, 91(16): 161406(R)-1-5.
[3]	NOGUCHI H, KITAGAWA H, KIYABU T,et al. Low temperature thermoelectric properties of Pb- or Sn-doped Bi-Sb alloys. J. Phys. Chem. Solids, 2007, 68(1): 91-95.
[4]	LIU H J, SONG C M, WU S T,et al. Processing method dependency of thermoelectric properties of Bi85Sb15 alloys in low temperature. Cryogenics, 2007, 47(1): 56-60.
[5]	SUNGLAE C, YUNKI K, SUK Y, et al. Artificially ordered Bi/Sb superlatitice alloys: fabrication and transport properties. Phys. Rev. B, 2001, 64(23): 235330-1-4.
[6]	LENOIR B, CASSART M, MICHENAUD J P, et al. Transport properties of Bi-rich Bi-Sb alloys. J. Phys. Chem. Solids, 1996, 57(1): 89-99.
[7]	CHEN Z, ZHOU M, HUANG R J,et al. Thermoelectric properties of p-type Pb-doped Bi85Sb15-xPbx alloys at cryogenic temperatures. J. Alloys Compd., 2012, 511(1): 85-89.
[8]	ROGACHEVA E I, DROZDOVA A A, NASHCHEKINA O N, et al. Transition into a gapless state and concentration anomalies in the properties of Bi100-xSbx solid solutions. Appl. Phys. Lett., 2009, 94(20): 202111-1-4.
[9]	DUTTA S, SHUBHA V, RAMESH T G.Effect of pressure and temperature on thermopower of Bi-Sb alloys.Physica B, 2010, 405(5): 1239-1243.
[10]	SINGH S, GARCIA-CASTRO A C, IRAIS V, et al. Prediction and control of spin polarization in a Weyl semimetallic phase of BiSb. Phys. Rev. B, 2016, 94(16): 161116(R)-1-5.
[11]	ŞAHIN CÜNEYT, MICHAEL E FLATTÉ. Tunable giant spin hall conductivities in a strong spin-orbit semimetal: Bi1-xSbx. Phys. Rev. Lett., 2015, 114(10): 107201-1-5.
[12]	ZHANG H J, LIU C X, QI X L, et al. Electronic structures and surface states of the topological insulator Bi1-xSbx. Phys. Rev. B, 2009, 80(8): 085307-1-8.
[13]	BANERJEE A, FAUQUE B, IZAWA K,et al. Transport anomalies across the quantum limit in semi-metallic Bi0.96Sb0.04. Phys. Rev. B, 2008, 78(16): 161103-1-4.
[14]	HYUNGYU J, CHRISTOPHER M J, HEREMANS J P. Enhancement in the figure of merit of p-type Bi100-xSbx alloys through multiple valence-band doping. Appl. Phys. Lett., 2012, 101(5): 053904-1-5.
[15]	LUO T T, WANG S Y, LI H,et al. Low temperature thermoelectric properties of melt spun Bi85Sb15 alloys. Intermetallics, 2013, 32: 96-102.
[16]	TSUCHIYA Y.The molar volume of molten As-Sb, As-Bi and As-Te systems: further evidence for rapid structural changes in liquid As in the supercooled state.J. Non-Crystalline Sol., 1999, 250(2): 473-477.
[17]	阎守胜. 固体物理基础.北京: 北京大学出版社, 2000: 283-290.
[18]	DRESSEL M, GRUNER G.Electrodynamics of Solids: Optical Properties of Electrons in Matter. Beijing: Beijing World Publishing Corporation, 2005: 339-360.
[19]	DEAN N, PETERSEN C, FAUSTI D, et al. Polaronic conductivity in the photoinduced phase of 1T-TaS2.Phys. Rev. Lett., 2011, 106(1): 016401-1-4.
[20]	CHEN Z G, YUAN R H, DONG T, et al. Infrared spectrum and its implications for the electronic structure of the semiconducting iron selenide K0.83Fe1.53Se2. Phys. Rev. B, 2011, 83(22): 220507(R)-1-4.
[21]	BASOV D N, TIMUSK T.Electrodynamics of high-Tc superconductors. Rev. Mod. Phys., 2005, 77(2): 721-778.
[22]	HU B F, CHENG B, YUAN R H,et al. Coexistence and competition of multiple charge-density-wave orders in rare-earth tritellurides. Phys. Rev. B, 2014, 90(8): 085105-1-7.
[23]	陆栋, 蒋平. 固体物理学.北京: 高等教育出版社, 2011: 104-114.
[24]	RAVINDRA N M, SRIVASTAVA V K.Temperature dependence of the energy gap in Bi-Sb systems.J. Phys. Chem. Solids, 1980, 41(11): 1289-1290.
[25]	VURGAFTMAN I, MEYER J R, RAM-MOHAN L R. Band parameters for III-V compound semiconductors and their alloys.J. Appl. Phys., 2001, 89(11): 5815-5875.

(Bi_0.85Sb_0.15)_1-_xAs_x的电输运和红外光学特性研究

Electric Transport and Infrared Property of (Bi_0.85Sb_0.15)_1-_xAs_x

RichHTML

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

图/表 7

参考文献 25

相关文章 14

编辑推荐

Metrics

本文评价

[1]	薛虹云, 王聪宇, MAHMOOD Asad, 于佳君, 王焱, 谢晓峰, 孙静. 二维g-C₃N₄与Ag-TiO₂复合光催化剂降解气态乙醛抗失活研究[J]. 无机材料学报, 2022, 37(8): 865-872.
[2]	刘旸, 于姗, 郑凯文, 陈维维, 董兴安, 董帆, 周莹. N-Bi₂O₂CO₃/CdSe量子点光催化氧化NO及原位红外光谱研究[J]. 无机材料学报, 2019, 34(4): 425-432.
[3]	姜金龙, 王琼, 黄浩, 张霞, 王玉宝, 耿庆芬. 紫外光辐照下钛硅共掺杂类金刚石薄膜微结构的演化[J]. 无机材料学报, 2014, 29(9): 941-946.
[4]	杨杭生, 邱发敏, 聂安民. 立方氮化硼薄膜中的氧杂质[J]. 无机材料学报, 2010, 25(7): 748-752.
[5]	李胜春,李波,漆小波,韦建军. Li₂O-B₂O₃-Al₂O₃复合干凝胶的制备及其红外光谱研究[J]. 无机材料学报, 2010, 25(4): 424-428.
[6]	王英伟,程灏波,朱忠丽,李建利,刘景和. Yb:KGd(WO₄)₂激光晶体结构与振动光谱[J]. 无机材料学报, 2005, 20(6): 1295-1300.
[7]	冯胜雷,梁辉,王科伟,李维克. Pechini法制备LiCoO₂机理的研究[J]. 无机材料学报, 2005, 20(4): 976-980.
[8]	赵宏生,李艳青,周万城,罗发. PbBr₂-PbF₂-P₂O₅玻璃的结构研究[J]. 无机材料学报, 2003, 18(1): 27-33.
[9]	郑子山,唐子龙,张中太,沈万慈. Li_1+xCo_yMn_2-x-yO₄的结构及电化学性能研究[J]. 无机材料学报, 2002, 17(5): 999-1003.
[10]	迟玉山,沈菊云,陈学贤. MgO-Al₂O₃-SiO₂微晶玻璃的IR、DTA和XRD研究[J]. 无机材料学报, 2002, 17(1): 45-50.
[11]	丁士进,张庆全,张卫,王季陶. PECVD法淀积氟碳掺杂的氧化硅薄膜表征[J]. 无机材料学报, 2001, 16(6): 1169-1173.
[12]	陆忠乾,江东亮,谭寿洪. PCVD法合成的无定形Si₃N₄纳米粉末和薄膜的红外特性比较[J]. 无机材料学报, 1997, 12(3): 435-439.
[13]	郭公毅,陈玉莉. 铅-钡-铝磷酸盐玻璃的热性质和红外光谱[J]. 无机材料学报, 1997, 12(2): 223-227.
[14]	巩雄,张桂兰,武鹏飞,汤国庆,陈文驹,杨宏秀. 稀土复合氧化物纳米微晶RE₂Sn_2-xB'_xO₇的制备、结构和红外光谱(RE=Sm,Ce;B’=Fe,Co,Ni;x=0～1.0)[J]. 无机材料学报, 1997, 12(2): 156-160.

(Bi0.85Sb0.15)1-xAsx的电输运和红外光学特性研究

Electric Transport and Infrared Property of (Bi0.85Sb0.15)1-xAsx

RichHTML

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

图/表 7

参考文献 25

相关文章 14

编辑推荐

Metrics

本文评价

(Bi_0.85Sb_0.15)_1-_xAs_x的电输运和红外光学特性研究

Electric Transport and Infrared Property of (Bi_0.85Sb_0.15)_1-_xAs_x