Journal of Inorganic Materials ›› 2010, Vol. 25 ›› Issue (12): 1313-1317.doi: 10.3724/SP.J.1077.2010.01313

• Research Paper • Previous Articles     Next Articles

Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam

WANG Xue-Tao1, GUAN Qing-Feng1, GU Qian-Qian1, PENG Dong-Jin1, LI Yan1, CHEN Bo2   

  1. (1. College of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; 2. State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China)
  • Received:2010-03-22 Revised:2010-05-31 Online:2010-12-20 Published:2010-11-24
  • Contact: GUAN Qing-Feng
  • Supported by:

    National Nature Science Foundation of China (50671042); Opening Foundation of State Key Laboratory of Applied
    Optices; Jiangsu University Science Foundation (07JDG032)

Abstract: In order to investigate the microstructures of nonmetallic material induced by high-speed deformation,  the high-current pulsed electron beam (HCPEB) technique was used to irradiate the single-crystal silicon. The surface microstructures induced by electron beam were studied by transmission electron microscope (TEM). The experimental results showed that a large number of defect structures were formed by the HCPEB irradiation. Among them, the typical defect structures were the parallel screw dislocations and the extrinsic stacking faults. In the meantime, the HCPEB irradiation induced high density of vacancy cluster defects. The surface stress with very high value and strain rate led to the integral shift of (111) crystal plane, which might be the dominating reason of the formation of the massive vacancy cluster defects. In addition, the mixtures of nanocrystal and amorphous in the surface of single-crystal silicon can be formed by HCPEB technique.

Key words: high-current pulsed electron beam, single-crystal silicon, structure defects, vacancy clusters

CLC Number: 

  • O77