Ar离子注入蓝宝石衬底诱导成核的高质量GaN外延
安瑕, 许晟瑞, 陶鸿昌, 苏华科, 杨赫, 许钪, 谢磊, 贾敬宇, 张进成, 郝跃
High Quality GaN Epitaxy Induced Nucleation by Ar Ion Implantation into Sapphire Substrate
AN Xia, XU Shengrui, TAO Hongchang, SU Huake, YANG He, XU Kang, XIE Lei, JIA Jingyu, ZHANG Jincheng, HAO Yue
无机材料学报
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2025, (1): 91
-96
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DOI: 10.15541/jim20240286
