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2007 , Vol. 22 >Issue 3: 545 - 549

DOI: https://doi.org/10.3724/SP.J.1077.2007.00545

研究论文

飞秒激光沉积β-FeSi2/Si半导体膜及光学性能研究

  • 周幼华 ,
  • 陆培祥 ,
  • 杨光 ,
  • 杨义发 ,
  • 郑启光
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  • 1. 华中科技大学激光技术国家重点实验室, 武汉 430074; 2. 江汉大学物理与信息工程学院, 武汉 430056

收稿日期: 2006-06-20

  修回日期: 2006-09-06

  网络出版日期: 2007-05-20

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β-FeSi2 thin film prepared by femtosecond laser ablation and its optical characteristic

  • ZHOU You-Hua ,
  • LU Pei-Xian ,
  • YANG Guang ,
  • YANG Yi-Fa ,
  • ZHENG Qi-Guang
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  • 1. State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074, China; 2. Physics & Information School of Jianghan University, Wuhan 430056, China

Received date: 2006-06-20

  Revised date: 2006-09-06

  Online published: 2007-05-20

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摘要

采用飞秒脉冲激光沉积法在Si(100)和Si(111)单晶基片上制备了均匀的单相β-FeSi2薄膜; 用X射线衍射(XRD), 场扫描电镜(FESEM), 能谱仪(EDX), 傅立叶红外拉曼谱仪(FTRIS)研究了薄膜的结构、组分、表面形貌和光学性能. 观察到了β-FeSi2在Si单晶基片上的生长与晶面取向有关的证据, 并在室温(2℃)下观测到β-FeSi2薄膜的光致发光, 其发光波长为1.53μm; 在氩离子514nm激光的激发下, 在192.0和243.9cm-1等位置观察到β-FeSi2的拉曼散射峰.

关键词： β-FeSi2,飞秒; 脉冲激光沉积法(PLD); 光致发光

本文引用格式

周幼华 , 陆培祥 , 杨光 , 杨义发 , 郑启光 . 飞秒激光沉积β-FeSi2/Si半导体膜及光学性能研究[J]. 无机材料学报, 2007 , 22(3) : 545 -549 . DOI: 10.3724/SP.J.1077.2007.00545

Abstract

The even single phase β-FeSi2 thin films were prepared by femtosecond laser deposition on Si (100) and Si (111) wafers using a FeSi2 alloy target. X-ray diffraction, field scanning electron microscope (FSEM), energy dispersive X-ray microanalysis (EDX), Fourier-transform Raman infrared spectroscope (FTRIS) were used to characterize the structure, composition, and properties of β-FeSi2 films. The growth of β-FeSi2 depends on the orientation of Si substrates. The photoluminescence from the grown single phase β-FeSi2 thin film observed at room temperature (2℃) is at a wavelength of 1.53 μm. Raman peaks of β-FeSi2 observed by an Raman microscope with 514.5nm argon laser are at 192.9cm-1, 243.9cm-1 and other positions.

Key words： β-FeSi2; femtosecond laser; pulsed laser deposition (PLD); photoluminescence.

参考文献

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