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无机材料学报

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2007 , Vol. 22 >Issue 3: 570 - 576

DOI: https://doi.org/10.3724/SP.J.1077.2007.00570

研究论文

甲烷浓度对CVD金刚石薄膜晶体学生长过程的影响

  • 朱宏喜 ,
  • 毛卫民 ,
  • 冯惠平 ,
  • 吕反修 ,
  • Vlasov I I ,
  • Ralchenko V G ,
  • Khomich A V
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  • 1. 北京科技大学材料学系, 北京 100083; 2. 北京科技大学新金属材料国家重点实验室, 北京 100083; 3. 北京科技大学功能材料研究所, 北京 100083; 4. General Physics Institute, Russia Academy of Sciences, Moscow 119991 Russia; 5. Institute of Radio Engineering & Electronics, Russia Academy of Sciences, Fryazino 141190 Russia

收稿日期: 2006-07-04

  修回日期: 2006-08-28

  网络出版日期: 2007-05-20

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Influence of Methane Concentration on Crystal Growing Process in CVD Free Standing Diamond Films

  • ZHU Hong-Xi ,
  • MAO Wei-Min ,
  • FENG Hui-Ping ,
  • LU Fan-Xiu ,
  • Vlasov I I ,
  • Ralchenko V G ,
  • Khomich A V
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  • 1. Department of Materials, University of Science and Technology Beijing, Beijing 100083, China; 2. State Key Laboratory of Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China; 3. Institute of Functional Materials, University of Science and Technology Beijing, Beijing 100083, China; 4. General Physics Institute, Russia Academy of Sciences, Moscow 119991, Russia; 5. Institute of Radio Engineering & Electronics, Russia Academy of Sciences, Fryazino 141190, Russia

Received date: 2006-07-04

  Revised date: 2006-08-28

  Online published: 2007-05-20

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摘要

采用X射线衍射技术、电子背散射衍射技术和扫描电镜分别观察了不同甲烷浓度条件下沉积的CVD自支撑金刚石薄膜的宏观织构、微区晶界分布和表面形貌. 研究了金刚石晶体{100}面和{111}面生长的晶体学过程. 研究表明, {100}面通过吸附活性基团CH22-, 而{111}面通过交替吸附活性基团CH3-和CH3-后脱氢堆积碳原子. 低甲烷浓度时, {111}面表面能低于{100}面, 使{111}面生长略快于{100}面. 甲烷浓度升高, 动力学作用增强使{100}面生长明显快于{111}面, 使金刚石薄膜产生{100}纤维织构; 同时显露的{100}面平行于薄膜表面, 竞争生长使位于晶体侧面的{111}面由于相互覆盖而减小, 形成了不同于单晶体自由生长的薄膜表面形貌组织.

关键词： 金刚石薄膜; 织构; 晶体生长; 表面形貌组织

本文引用格式

朱宏喜 , 毛卫民 , 冯惠平 , 吕反修 , Vlasov I I , Ralchenko V G , Khomich A V . 甲烷浓度对CVD金刚石薄膜晶体学生长过程的影响[J]. 无机材料学报, 2007 , 22(3) : 570 -576 . DOI: 10.3724/SP.J.1077.2007.00570

Abstract

The Macro-texture, grain boundary distribution and surface morphlolgy in CVD free standing diamond films deposited with different methane concentrations were observed by X ray diffraction technology, electron backscatter diffraction and SEM. The crystal growing process of {100} and {111} planes in diamond crystal was studied. It is shown that diamond films adsorb activated radical CH22- on {100} plane or adsorb CH3- and CH3- on {111} plane alternately. Carbon atoms stack on the film surface during dehydrogenation. At low methane concentration, the expansion ratio of {111} planes is close to, but faster
than that of {100} planes because of their relative lower surface energy. The enhanced driving force induced by the increased methane concentration results in faster growth of {100} plane than that of {111} plane, which promotes the formation of {100} texture. The film surface morphology consisits of the exposured {100} planes that are parallel to the film surface and the exposured {111} planes area as the side surface that decrease during the competition growth, which is different from that of single crystal growth.

Key words： diamond film; texture; crystalgrowing; surface structure

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