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2009 , Vol. 24 >Issue 4: 783 - 786

DOI: https://doi.org/10.3724/SP.J.1077.2009.00783

研究论文

非极性GaN用r面蓝宝石衬底

  • 杨新波 ,
  • 徐 军 ,
  • 李红军 ,
  • 毕群玉 ,
  • 程 艳 ,
  • 苏良碧 ,
  • 周国清
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  • 1. 中国科学院 上海硅酸盐研究所 透明光功能无机材料重点实验室, 上海 201800; 2. 中国科学院 上海光学精密机械研究所, 上海 201800; 3. 中国科学院 研究生院, 北京 100049

收稿日期: 2008-12-05

  修回日期: 2009-02-09

  网络出版日期: 2009-07-20

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R-plane Sapphire Substrate for Non-polar GaN Film

  • YANG Xin-Bo ,
  • XU Jun ,
  • LI Hong-Jun ,
  • BI Qun-Yu ,
  • CHENG Yan ,
  • SU Liang-Bi ,
  • ZHOU Guo-Qing
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  • 1. Key Laboratory of Transparent and OptoFunctional Advanced Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China; 2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; 3 Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

Received date: 2008-12-05

  Revised date: 2009-02-09

  Online published: 2009-07-20

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摘要

采用温梯法生长了非极性GaN外延衬底r(0112)面蓝宝石, 使用化学机械抛光加工衬底表面, 对衬底的结晶质量、光学性能和加工质量进行了研究. 结果显示r面蓝宝石衬底基本性能参数如下：平均半峰宽值为19.4arcsec; 位错密度为5.6×103cm-2, 波长大于300nm时的平均透过率大于80％; 光学均匀性Δn=6.6×10-5; 平均表面粗糙度为0.49nm. 结果表明, 温梯法生长的r(0112)面蓝宝石衬底结晶质量好、位错密度低、光学性能优良、加工的表面质量高, 达到了GaN外延衬底的标准.

关键词： r面蓝宝石; 非极性GaN; 衬底

本文引用格式

杨新波 , 徐 军 , 李红军 , 毕群玉 , 程 艳 , 苏良碧 , 周国清 . 非极性GaN用r面蓝宝石衬底[J]. 无机材料学报, 2009 , 24(4) : 783 -786 . DOI: 10.3724/SP.J.1077.2009.00783

Abstract

R-plane sapphire used for epitaxial growth of non-polar GaN film was grown by the temperature gradient technique (TGT) method and chemical mechanical method was used to polish the r-plane sapphire substrate. The crystallization quality, optical property and surface roughness of as-obtained r-plane sapphire substrate were investigated. The average full width at half maximum (FWHM) of the substrate is 19.4arcsec and the dislocation density is 5.6×103cm-2. The transmission of the substrate is higher than 80% when the wavelength is longer than 300nm and the optical homogeneity is 6.6×10-5. The average surface roughness of the r-plane sapphire substrate is 0.49nm. The results indicate that as-obtained r-plane sapphire substrate meets the basic standard of GaN substrate.

Key words： r-plane sapphire; non-polar GaN; substrate

参考文献

［1］Craven M D, Lim S H, Wu F, et al. Appl. Phys. Lett., 2002, 81(3): 469-471.
［2］Kuokstis E, Chen C Q, Gaevski M E, et al. Appl. Phys. Lett., 2002, 81(22): 4130-4133.
［3］Chitnis A, Chen C Q, Adivarahan V, et al. Appl. Phys. Lett., 2004, 84(18): 3663-3665.
［4］Paskov P P, Schifano R, Paskova T, et al. Phys. B, 2006, 376(6): 473-476.
［5］Walterelt P, Brandt O, Trampert A, et al. Nature, 2000, 406(12): 865-869.
［6］周建华, 周圣明, 邹 军, 等. 人工晶体学报, 2006, 36(4): 765-771.
［7］Chen C Q, Yang J W, Wang H M, et al. Jpn. J. Appl. Phys., 2003, 42(12): 640-648.
［8］徐建卫, 周永宗, 周国清. 人工晶体学报, 1998, 27(3): 242-245.
［9］Azoulay M, Rotter S, Gafni G, et al. J. Crystal Growth, 1992, 117(1-4): 276-280.
［10］Levy P W. Phys. Rev. B, 1961, 123(4): 1226-1231.
［11］Evans B D, Stapelbroek M. Phys. Rev. B, 1978, 18(12): 7089-7094.
［12］王银珍, 周圣明, 徐 军. 人工晶体学报, 2004, 33(3)：441-447.
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